离子注入型硅掺砷阻挡杂质带长波红外探测器的研究
投稿时间:2019-10-05  修订日期:2019-11-04  点此下载全文
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作者单位E-mail
王超 中国科学院上海技术物理研究所红外物理国家重点实验室中国科学院大学 wangchao@mail.sitp.ac.cn 
李宁 中国科学院上海技术物理研究所 ningli@mail.sitp.ac.cn 
戴宁 中国科学院上海技术物理研究所 ndai@mail.sitp.ac.cn 
石旺舟 上海师范大学数理学院物理系  
胡古今 上海师范大学数理学院物理系 hugj@mail.sitp.ac.cn 
基金项目:国家自然科学基金和国家重点基础研究发展计划项目(批准号:11933006, 61805060, 61290304,10904158, 10990103,2013CB632802,2011CB922004)
中文摘要:研究了基于离子注入技术制备硅掺砷阻挡杂质带探测器的工艺,通过优化工艺条件和相关器件的结构与材料参数,制造了具有良好光电响应性能的长波红外探测器。在温度5K,-3.8V工作偏压下,探测器的峰值响应波长为23.8μm,黑体响应率为3.7A/W,3.2v时最大探测率为5.21013 cm?Hz1/2/W。性能指标堪与文献报道的结果相媲美甚至更好,展示了离子注入工艺在制作阻挡杂质带探测器方面的潜在优势,特别是离子注入工艺与目前的微电子电路技术相兼容,能将探测器与读出电路集成到一块芯片上,在降低成本的同时提高探测器成像性能。
中文关键词:阻挡杂质带,长波红外探测器,硅掺砷,离子注入工艺
 
Study on ion-implanted Si:As blocked impurity band detectors for VLWIR detection
Abstract:An ion-implant technique for fabricating Si:As blocked impurity band detectors for VLWIR detection had been investigated, and the detectors with good photoelectric response performance had been demonstrated by optimizing both the processing condition and the device structural parameters together with material characteristic parameters. At 5K temperature, with a dc bias voltage of -3.8V, the peak response wavelength of the fabricated devices is 23.8 μm, the blackbody responsivity is 3.7A/W, and the detectivity is 5.3×1013cm?Hz1/2/W at 3.2V, which are comparable to (and even superior to) those reported in literatures. Especially, the device manufacturing process is compatible with that for fabrication of integrated circuit, and the detectors can be integrated with readout circuits on one chip, resulting in a remarkable reduction in produce cost and a significant improvement of the imaging performance.
keywords:blocked impurity band, long-wavelength infrared detectors,Si:As, ion-implant process
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