与GaAs基VCSEL同材料体系高对比度亚波长光栅的设计
投稿时间:2019-06-21  修订日期:2019-10-08  点此下载全文
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作者单位E-mail
王凤玲 长春理工大学高功率半导体激光国家重点实验室 wangflling@qq.com 
陈磊 长春理工大学高功率半导体激光国家重点实验室  
张秋波 长春理工大学高功率半导体激光国家重点实验室  
徐莉 长春理工大学高功率半导体激光国家重点实验室  
李辉 长春理工大学高功率半导体激光国家重点实验室  
王海珠 长春理工大学高功率半导体激光国家重点实验室  
郝永芹 长春理工大学高功率半导体激光国家重点实验室 hyq72081220@aliyun.com 
马晓辉 长春理工大学高功率半导体激光国家重点实验室  
基金项目:国家自然科学基金项目(面上项目,重点项目,重大项目);国家自然科学基金青年科学基金
中文摘要:设计了一种用于850nm GaAs基VCSEL的高折射率对比度亚波长光栅(HCG),整体结构采用GaAs材料体系,包含光栅层及为缓解其应力问题而设计的应力缓冲层和以AlGaAs或AlAs氧化后形成的AlOx低折射率亚层。通过Rsoft软件对HCG的反射特性进行仿真研究,分析了不同光栅参数对反射谱的作用规律,重点探究了应力缓冲层和低折射率亚层对光栅特性的影响。设计了中心波长850nm 的TM模HCG,反射率大于99.9%的带宽可达91nm,与中心波长之比达到10.7%,同时TE模的反射率不超过90%,显示出了良好的偏振选择性。该结构可以替代VCSEL中的P型分布式布拉格反射镜,提供高反射率、宽带宽,并改善由不同材料体系所导致的应力问题,提高器件稳定性。
中文关键词:高折射率对比度光栅  分布式布拉格反射镜  垂直腔面发射激光器  砷化镓
 
Design of high contrast subwavelength gratings with GaAs-based VCSEL materials
Abstract:A high-refractive-index contrast subwavelength grating (HCG) for 850 nm GaAs-based VCSELs was designed. The whole structure is based on GaAs material system,including a grating layer, a stress buffer layer designed to alleviate its stress problem and an AlOx low refractive index sublayer oxidized by AlGaAs or AlAs. The reflection characteristics of the HCG are simulated by Rsoft software, and the effects of different grating parameters on the reflection spectrum are analyzed. In particular, the effects of stress buffer layer and low refractive index sublayer on characteristics of gratings are investigated. The 850nm TM mode HCG shows a very good reflection characteristic. It has a large reflection bandwidth of up to 91nm with its reflectivity more than 99.9%, and the ratio with the center wavelength reaches 10.7%. Moreover, its reflectivity for TE mode is ensured to be lower than 90%, showing good polarization selectivity. This HCG can replace P-type distributed Bragg reflectors in VCSEL, providing high reflectivity, wide bandwidth, and good stability.
keywords:high-refractive-index contrast grating (HCG),distributed Bragg reflectors (DBRs),vertical cavity surface emitting laser (VCSEL),gallium arsenide (GaAs)
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