(英)利用大周期光子晶体结构增强InAs/GaAs量子点的激发态发光
投稿时间:2019-03-19  修订日期:2019-04-24  点此下载全文
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作者单位E-mail
秦璐 中国科学院半导体研究所 集成光电子国家重点实验室 qinlu@semi.ac.cn 
徐波 中国科学院半导体研究所材料重点实验室  
许兴胜 中国科学院半导体研究所 集成光电子国家重点实验室 xsxu@semi.ac.cn 
基金项目:国家自然科学基金项目(面上项目,重点项目,重大项目),国家重点基础研究发展计划(973计划)
中文摘要:在该研究中,通过激光全息和湿法腐蚀的方法在InAs/GaAs量子点材料上制备光子晶体。本文研究了由激光二极管激发制备的光子晶体的InAs / GaAs量子点材料的光致发光光谱。发现具有光子晶体的量子点的光谱显示出多峰结构,光子晶体对短波长部分的发光增强和调制比对长波长成分的增强和调制更明显。InAs / GaAs量子点的光致发光光谱通过刻蚀形成的光子晶体结构,并且量子点的激发态发光得到了明显增强。
中文关键词:关键词:量子点  光子晶体  激光全息曝光  光致发光光谱
 
Enhancement of excited-state emission of InAs/GaAs quantum dots with large-period photonic crystal
Abstract:In this study, the photoluminescence spectra of InAs/GaAs quantum dots material with photonic crystals were investigated by laser diode excitation. The photonic crystals were fabricated on InAs/GaAs quantum dots by laser holography and wet etching method. It was found that the spectra from quantum dots with photonic crystals appeared multi-peak structure; the enhancement and modification to the short-wavelength component were more pronounced than those to the long-wavelength components. The photoluminescence from InAs/GaAs quantum dots was modified by photonic crystals, and the emission from excited states was significantly enhanced.
keywords:quantum  dots, photonic  crystal, laser  holographic, photoluminescence  spectra
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