(英)锰掺杂对钛酸锶铅铁电薄膜带-带跃迁和带尾吸收特性的影响
投稿时间:2019-02-13  修订日期:2019-03-01  点此下载全文
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作者单位E-mail
李延青 极化材料与器件教育部重点实验室, 华东师范大学光电系 1054134505@qq.com 
吴曼 极化材料与器件教育部重点实验室, 华东师范大学光电系  
杨静 极化材料与器件教育部重点实验室, 华东师范大学光电系 jyang@ee.ecnu.edu.cn 
基金项目:国家自然科学基金项目(面上项目,重点项目,重大项目)
中文摘要:本文通过透射光谱研究了锰掺杂量对钛酸锶铅铁电薄膜光学特性尤其是带-带跃迁和带尾吸收特性的影响,并利用柯西色散关系获得了光学透明区的光学常数。研究表明:随着锰掺杂量的增加, 钛酸锶铅铁电薄膜的禁带宽度减小而带尾能增加。禁带宽度随锰掺杂的收缩可以归因为锰3d轨道降低了导带底的能级及掺杂后晶格的减小。掺杂锰离子的随机占位和非等价掺杂后氧空位浓度的增加则是导致局域带尾态拓宽的主要原因。
中文关键词:铁电薄膜  电子能带结构  光学特性
 
The effect of Mn doping on the interband transition and band tail absorption characteristics of Mn:(Pb, Sr)TiO3 ferroelectric thin films
Abstract:Mn composition dependence of optical properties, especially interband electronic transition and band tail absorption behaviors, in Mn doped (Pb, Sr)TiO3(PST) films were investigated by transmittance spectroscopy. The optical parameters of Mn doped PST films in transparent region were evaluated by Cauchy model. The decrease of optical band gap and the expansion of the band tail states with the increasing of Mn dopant amount were observed. The shrinkage of optical band gap is attributed to lowering the bottom of conduction bands by Mn 3d orbitals and the decrease of lattice constant in Mn doped PST films. Meanwhile, the random occupation of Mn ion and the increase of oxygen vacancy after Mn doping are the main causes for the expansion of localized states in band tails.
keywords:Ferroelectric films  Electronic band structure  Optical properties
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