(英)1.55 μm AlGaInAs/InP小发散角量子阱激光器的仿真和制备
投稿时间:2019-02-01  修订日期:2019-03-06  点此下载全文
引用本文:
摘要点击次数: 53
全文下载次数: 0
作者单位E-mail
熊迪 中国科学院半导体研究所 xiongdi@semi.ac.cn 
郭文涛 中国科学院半导体研究所 wtguo@semi.ac.cn 
郭小峰 中国科学院半导体研究所  
刘海峰 中国科学院半导体研究所  
廖文渊 中国科学院半导体研究所  
刘维华 中国科学院半导体研究所  
张杨杰 中国科学院半导体研究所  
曹营春 中国科学院半导体研究所  
谭满清 中国科学院半导体研究所 mqtan@semi.ac.cn 
中文摘要:理论仿真和实验制备了AlGaInAs/InP材料1.55 μm小发散角量子阱激光器。为了扩展近场光场并减小内损耗,将一个非对称模式扩展层插入到外延结构的下盖层当中。仿真结果表明该模式扩展层除了少量增加激光器阈值电流以外,在不影响激光器其它性能的情况下能显著减小激光器的垂直远场发散角。实验结果与理论仿真高度吻合。成功制备出脊宽4 μm,腔长1000 μm的脊波导小发散角激光器。在端面未镀膜的情况下,该激光器阈值电流为56 mA,输出功率为17.38 mw@120 mA,斜率效率可以达到0.272 W/A。实验测得垂直远场发散角为29.6°,相比较传统激光器减小了约35.3%。
中文关键词:铟磷基激光器  发散角  光场分布
 
Simulation and fabrication of 1.55 μm AlGaInAs/InP quantum well lasers with low beam divergence
Abstract:1.55μm AlGaInAs/InP quantum well lasers with low beam divergence are theoretically designed and experimentally fabricated. An asymmetrical mode expand layer (MEL) was inserted in lower cladding to expand near field intensity distribution and decrease internal loss. Simulation results showed that the use of MEL won’t influence the laser performance negatively but dramatically decrease the vertical beam divergence at a price of slightly increase of threshold current. And the experiment results showed high agreement to it. With a 4μm-wide and 1000μm-long ridge waveguide laser with MEL, the threshold current and output power of single facet without coating is 56mA and 17.38mw@120mA, and the slope efficiency is 0.272W/A. The vertical beam divergence is 29.6° and decreases about 35.3% compared to that of typical lasers.
keywords:InP-based lasers, beam divergence, intensity distribution
  查看/发表评论  下载PDF阅读器

版权所有:《红外与毫米波学报》编辑部