基于异质结倍增层的InAlAsSb SACM雪崩光电二极管的优化
投稿时间:2019-01-12  修订日期:2019-02-02  点此下载全文
引用本文:
摘要点击次数: 58
全文下载次数: 0
作者单位E-mail
蒋 毅 苏州大学 电子信息学院 skywing_jiang@qq.com 
陈 俊 苏州大学 电子信息学院 junchen@suda.edu.cn 
基金项目:国家自然科学基金(61774108)
中文摘要:使用低工作电压的雪崩光电二极管(APD)有利于提高集成电路的稳定性和降低功耗。本文建立了一个分离吸收、电荷、倍增(SACM)型的雪崩光电二极管的模型,为了在低偏压下获得高增益同时不降低工作电压范围,这个模型采用了具有高低禁带宽度的异质结倍增层。同时,本文研究了异质结倍增层的厚度和掺杂浓度对暗电流和增益的影响。通过对掺杂浓度的优化,击穿电压和穿通电压可以同时下降。
中文关键词:InAlAsSb  雪崩光电二极管  异质结倍增层  击穿电压  穿通电压
 
Optimization of InAlAsSb SACM APD with a heterojunction multiplication layer
Abstract:For APDs, low operation voltage is required for integrated circuit stability and low power consumption. In this paper, a model for InAlAsSb separate absorption, charge, and multiplication (SACM) APD is established. To get higher gain at lower reversed bias voltage without sacrificing the operating voltage range, a high/low band-gap multiplication layer is adopted. The effects of the thickness and doping concentration of the multiplication layer on the dark-current and the break-down voltage have been detailly investigated. By optimization of the doping concentration, the break-down voltage and punch-through voltage can be decreased simultaneously.
keywords:InAlAsSb, avalanche  photodiode, heterojunction  multiplication layer, break-down voltage, punch-through voltage
  查看/发表评论  下载PDF阅读器

版权所有:《红外与毫米波学报》编辑部