(英)Potentials of GaP as millimeter wave IMPATTdiode with reference to Si and GaAs
投稿时间:2018-09-24  修订日期:2019-02-03  点此下载全文
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作者单位E-mail
DR JANMEJAYA PRADHAN College of Engineering, Bhubaneswar, India janmejaya74@gmail.com 
Santosh Kumar Swain Sambal pur University  
Dr Satya Ranjan Pattnaik National Institute of Science and Technology  
中文摘要:This paper presents the simulation results of DC, small-signal and noise properties of GaP based DDR IMPATT diodes. In simulation study we have considered the flat DDR structures of IMPATT diode based on GaP, GaAs, Si and GaN(wz) material. The diodes are designed to operate at the millimeter window frequencies of 94 GHz and 220 GHz. The simulation results of these diodes reveal GaP is a promising material for IMPATT applications based on DDR structure with high break down voltage (VB) as compared to Si and GaAs IMPATTs. It is also encouraging to worth note GaP base IMPATT diode shows a better output power density of 4.9×109 W/m2 as compared to Si and GaAs based IMPATT diode. But IMPATT diode based on GaN(wz) displays large values of break down voltage, efficiency and power density as compared to Si, GaAs and GaP IMPATTs.
中文关键词:IMPATT, GaP, GaN, microwave  and millimetre  wave
 
Potentials of GaP as millimeter wave IMPATTdiode with reference to Si and GaAs
Abstract:This paper presents the simulation results of DC, small-signal and noise properties of GaP based DDR IMPATT diodes. In simulation study we have considered the flat DDR structures of IMPATT diode based on GaP, GaAs, Si and GaN(wz) material. The diodes are designed to operate at the millimeter window frequencies of 94 GHz and 220 GHz. The simulation results of these diodes reveal GaP is a promising material for IMPATT applications based on DDR structure with high break down voltage (VB) as compared to Si and GaAs IMPATTs. It is also encouraging to worth note GaP base IMPATT diode shows a better output power density of 4.9×109 W/m2 as compared to Si and GaAs based IMPATT diode. But IMPATT diode based on GaN(wz) displays large values of break down voltage, efficiency and power density as compared to Si, GaAs and GaP IMPATTs.
keywords:IMPATT, GaP, GaN, microwave  and millimetre  wave
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