基于0.13-μm SiGe BiCMOS工艺的在片背腔贴片天线
投稿时间:2018-08-02  修订日期:2018-08-02  点此下载全文
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作者单位E-mail
肖军 北京邮电大学电子工程学院 xiaojun19861986@163.com 
李秀萍 北京邮电大学电子工程学院 xpli@bupt.edu.cn 
齐紫航 北京邮电大学电子工程学院  
朱 华 北京邮电大学电子工程学院  
冯魏巍 北京邮电大学电子工程学院  
中文摘要:本文提出了一款基于0.13-μm SiGe BiCMOS工艺设计、加工的340-GHz在片背腔贴片天线。辐射贴片位于AM金属层,带状线馈线置于LY金属层并通过连接AM金属层和LY金属层的金属化通孔对辐射贴片馈电。通过设计连接AM金属层和M1金属层的金属化通孔形成谐振腔体展宽了天线阻抗带宽、提升了天线辐射性能。天线的仿真阻抗带宽(S11≤-10 dB)为9.2 GHz(335.6-344.8 GHz)。天线在340GHz处的仿真增益为3.2 dBi。天线的整体尺寸为0.5×0.56 mm2。
中文关键词:0.13-μm SiGe BiCMOS工艺,背腔,贴片天线,在片天线
 
Cavity-backed On-chip Patch Antenna in 0.13-μm SiGe BiCMOS Technology
Abstract:This letter presents a 340-GHz cavity-backed on-chip patch antenna design and fabrication using standard 0.13-μm SiGe BiCMOS technology. The patch placed at AM layer is fed by a stripline at LY layer through via holes from LY to AM layer. The via holes are built between the top metal layer (AM layer) and the ground plane (M1 layer) to form a cavity which improves the impedance matching bandwidth and the radiation performances of the antenna. The proposed antenna shows a simulated impedance bandwidth of 9.2 GHz from 335.6 to 344.8 GHz for S11 less than -10 dB. The simulated gain of the antenna at 340 GHz is 3.2 dBi. The total area of the antenna is 0.5×0.56 mm2.
keywords:0.13-μm SiGe BiCMOS technology, cavity backed, patch antenna, on-chip antenna.
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