(英)STI埋层的高光电流和低暗计数率单光子雪崩二极管
投稿时间:2018-06-24  修订日期:2018-10-16  点此下载全文
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作者单位E-mail
金湘亮 湘潭大学 jinxl@xtu.edu.cn 
彭亚男 湘潭大学  
曾朵朵 湘潭大学  
杨红姣 湘潭大学  
基金项目:国家自然科学基金项目(面上项目,重点项目,重大项目),湖南省青年学者自然科学基金。
中文摘要:本文研究和分析了一种0.18-μm CMOS工艺单光子雪崩二极管(SPAD),其结构能抑制过早的边缘击穿(PEB),同时获得较大的光电流和低的暗计数率(DCR)。该SPAD由p-well/deep n-well的感光结,deep n-well向上扩散形成的区域和边缘Shallow Trench Isolation(STI)共同形成的保护环组成。本文通过分析和测试得出了STI的尺寸与暗计数率和光电流大小规律。在室温环境下测试结果证明,在STI层与保护环之间的重叠区域为1-um时,SPAD的暗计数和光电流获得最优结果。此外,直径为10-μm的圆形SPAD器件的暗计数率为208Hz,且在波长为510 nm时峰值光子探测概率为20.8%,此时具有低的暗计数率和高的探测效率以及宽的光谱响应特性。
中文关键词:单光子雪崩二极管  边缘击穿  暗记数率  互补金属氧化物半导体  光子探测概率
 
STI-Bounded Single-Photon Avalanche Diode with High Photocurrent and Low Dark Rate
Abstract:A 0.18-μm CMOS process single photon avalanche diode (SPAD) is studied in this paper in order to inhibit premature edge breakdown (PEB) and obtain a larger photo current and a low dark count rate (DCR). The SPAD consists of a p-well/deep n-well photosensitive junction and a guard ring that formed by a deep n-well up-diffused region and an edge STI. The size of STI layer related to light current and dark rate is obtained by analysing and testing. The measurement results show that the photo current and dark count of SPAD are the best when the overlapping length between the STI and the guard ring is 1-μm at room temperature. In addition, the SPAD with a diameter of 10-μm has a low dark count rate, high photon detection probability (PDP) and a wide spectral response, a dark count rate of 208 Hz, a 20.8% peak PDP when the wavelength is 510nm.
keywords:single-photon avalanche diode (SPAD), premature edge breakdown (PEB), dark count rate (DCR), complementary metal oxide semiconductor (CMOS), photon detection probability (PDP)
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