中波碲镉汞雪崩光电二极管(APD)增益特性
投稿时间:2018-05-27  修订日期:2018-10-13  点此下载全文
引用本文:
摘要点击次数: 74
全文下载次数: 
作者单位E-mail
李雄军 昆明物理研究所 lixiongjun666@126.com 
韩福忠 昆明物理研究所  
李立华 昆明物理研究所  
李东升 昆明物理研究所  
胡彦博 昆明物理研究所  
杨登泉 昆明物理研究所  
杨超伟 昆明物理研究所  
孔金丞 昆明物理研究所  
庄继胜 昆明物理研究所  
赵俊 昆明物理研究所 junzhao80@163.com 
中文摘要:采用不同工艺制备了中波碲镉汞雪崩二极管(HgCdTe APD)器件,利用不同方法对其结特性和增益随偏压变化关系进行了表征,并基于Beck模型和肖克莱解析式进行了拟合分析。结果表明,不同工艺制备的APD器件饱和耗尽区宽度分别为1.2μm 和2.5μm,较宽的耗尽层有效抑制了高反偏下器件的隧道电流,器件有效增益则从近100提高至1000以上。采用拟合HgCdTe APD器件增益-偏压曲线获得了较好的效果,且拟合得到的参数与Sofradir的Rothman的结果相似。
中文关键词:中波碲镉汞  雪崩光电二极管  增益  C-V
 
Gain characteristics of MW HgCdTe avalanche photodiodes
Abstract:The MW HgCdTe avalanche photodiodes (HgCdTe APDs) were prepared by different processes. The pn junction characteristic and the relation between gain and bias voltage for HgCdTe APDs were characterized by different methods. The gain-bias curves of APDs were fitted based on the Beck model and Shockley,s analytical expression. The results show that the widths of the saturated depletion region for APDs fabricated by different processes are 1.2μm and 2.5μm respectively. The wide depletion region effectively suppresses the tunneling current at high reverse bias, and Shockley,s analytical expression has been found to give an excellent fit to the gain–bias curves of HgCdTe APDs, and fitting parameters are similar to the results of Rothman at Sofradir.
keywords:MW HgCdTe  avalanche photodiode  Gain  C-V
  查看/发表评论  下载PDF阅读器

版权所有:《红外与毫米波学报》编辑部