0.1-325 GHz频段InP DHBT器件在片测试结构建模
投稿时间:2018-05-02  修订日期:2018-08-20  点此下载全文
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作者单位E-mail
徐忠超 南京电子器件研究所 微波毫米波单片集成和模块电路国家级重点实验室 zhongchao_xu@163.com 
刘军 杭州电子科技大学 教育部射频电路与系统重点实验室 ljun77@hdu.edu.cn 
钱峰 南京电子器件研究所 微波毫米波单片集成和模块电路国家级重点实验室  
陆海燕 南京电子器件研究所 微波毫米波单片集成和模块电路国家级重点实验室  
程 伟 南京电子器件研究所 微波毫米波单片集成和模块电路国家级重点实验室  
周文勇 杭州电子科技大学 教育部射频电路与系统重点实验室  
中文摘要:给出了InP DHBT器件在片测试用到的开路和短路结构的等效电路模型,模型拓扑结构基于测试物理结构建立,并对其在亚毫米波段的高频寄生进行相对完整的考虑。模型的容性和阻性寄生采用解析提取技术从开路结构低频测试数据中获取。模型的感性寄生和高频趋肤效应采用传统物理公式计算初值,并结合短路测试结构的低频解析提取结果对计算公式进行修正,使其适用于实际测试结构建模。模型和模型参数提取方法,采用0.5 um InP DHBT工艺上设计所得开路、短路测试结构进行验证,模型仿真和测试所得S参数在0.1-325 GHz频段内有很好吻合。
中文关键词:铟磷双异质结双极晶体管  在片测试结构  建模  0.1-325 GHz
 
On-wafer test structures modeling for the InP DHBTs in the frequency range of 0.1-325 GHz
Abstract:The equivalent circuit models for the open and short structures used in InP DHBT on-wafer testing are presented. The model topologies are physically based. The high frequency parasitics of the structures are considered in the model topologies completely. The capacitive and resistive parasitics are extracted from the low-frequency measurements of the open structure directly. Tradition physical formulations are employed to have an initially determination of the inductive and skin effect elements of the models, and further corrected by using the analytically extracted results from the low-frequency measurements of the short structure, which enables an instance accurate formulations for the test structures modeling. The models and the modeling methodology are verified using the open and short structures manufactured at a 0.5 um InP DHBT technology, excellent agreements of the model simulated and measured results are achieved over the frequency range of 0.1-325 GHz.
keywords:InP DHBT  on-wafer test structures  modeling  0.1-325 GHz
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