W波段InP HBT 宽带高功率压控振荡器
投稿时间:2018-04-15  修订日期:2018-06-21  点此下载全文
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作者单位E-mail
王溪 中国科学院微电子研究所 wangxi1@ime.ac.cn 
苏永波 中国科学院微电子研究所  
阿瑟夫 中国科学院微电子研究所  
赵华 中国科学院微电子研究所  
丁武昌 中国科学院微电子研究所  
丁芃 中国科学院微电子研究所  
童志航 中国科学院微电子研究所  
金智 中国科学院微电子研究所 1335338607@qq.com 
基金项目:国家自然科学基金项目(面上项目,重点项目,重大项目)
中文摘要:本文介绍了一款具有较高输出功率和宽调谐频率范围的基波压控振荡器单片集成电路。其制作工艺为fT =170GHz,fmax =250GHz的0.8um InP DHBT工艺。电路核心部分采用了平衡式考毕兹振荡器拓扑,并在后面添加了一级缓冲放大器来抑制负载牵引效应,并提升了输出功率。DHBT的反偏CB结作为变容二极管来实现频率调谐。芯片测量结果表明,VCO的频率调谐范围为81- 97.3GHz,相对带宽为18.3 %。在调谐频率范围内最大输出功率为10.5 dBm,输出功率起伏在3.5 dB以内。在该VCO的最大调谐频率97.3 GHz处相位噪声为-88 dBc/Hz @1MHz。在目前所报道的InP HBT基VCO MMIC中,本文在如此宽的频率调谐范围内实现了最高的输出功率。
中文关键词:InP DHBT  压控振荡器  宽调谐范围  高输出功率
 
Fundamental W-Band InP DHBT-Based Voltage-Controlled Oscillator With Wide Tuning Range and High Output Power
Abstract:In this paper, a fundamental W-band monolithic microwave integrated circuit (MMIC) voltage controlled oscillator (VCO) featuring high output power and wide tuning range is proposed. The VCO is fabricated utilizing 0.8μm InP DHBT technology with peak fTand fmax of 170 and 250 GHz, respectively. The VCO core implements a balanced Colpitts-type topology. An additional buffer amplifier stage is connected with the VCO core to further boost output power as well as eliminate the load pulling effect. The DHBT base-collector P-N junction at reverse bias is chosen as varactor diode to realize a wide frequency tuning. The measured results demonstrate that the oscillation frequency of the proposed VCO can be tuned between 81- 97.3GHz, which is a relative tuning bandwidth of 18.3 %. Over this frequency range the maximum output power of 10.5 dBm is achieved, and the power variation is less than 3.5 dB. A phase noise of -88 dBc/Hz @1MHz is obtained at the highest oscillation frequency. To the authors’ best knowledge, this is the highest output power with such a wide tuning range reported for a W-band InP DHBT MMIC VCO.
keywords:InP  DHBT, voltage-controlled  oscillator, wide  tuning range, high  output power
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