(英)GaAsSb外延层中组分非均匀对载流子复合动力学的影响
投稿时间:2018-03-27  修订日期:2018-04-09  点此下载全文
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作者单位E-mail
张斌 中国科学院上海技术物理研究所 红外物理国家重点实验室 bzhang@mail.sitp.ac.cn 
邱维阳 中国科学院上海技术物理研究所 红外物理国家重点实验室  
陈舒拉 Department of Physics,Chemistry and Biology,Linköping University,Linköping S- ,Sweden  
陈平平 中国科学院上海技术物理研究所 红外物理国家重点实验室  
W. M Chen Department of Physics,Chemistry and Biology,Linköping University,Linköping S- ,Sweden  
I. A. Buyanova Department of Physics,Chemistry and Biology,Linköping University,Linköping S- ,Sweden  
王兴军 中国科学院上海技术物理研究所 红外物理国家重点实验室 xjwang@mail.sitp.ac.cn 
基金项目:国家自然科学基金项目(面上项目,重点项目,重大项目),
中文摘要:采用低温荧光、光调制反射以及变温的时间分辨荧光光谱研究了GaAsSb外延层中的光发射和载流子动力学特性。低温荧光和光调制反射光谱测量揭示了GaAsSb外延层中垂直组分非均匀分布。低Sb组分区与较高Sb组分区的荧光衰减动力学明显不同,在初始阶段分别表现为快速下降和缓慢上升。变温的时间分辨荧光与理论模拟结果表明,时间分辨荧光光谱的准确分析需要考虑载流子从低Sb组分区向高Sb组分区的输运。
中文关键词:镓砷锑  非均匀  载流子局域  载流子输运
 
Effect of carrier’s transfer on the recombination dynamics in vertically nonuniform GaAsSb epilayer
Abstract:The optical emission and carrier dynamics in GaAsSb epilayer was investigated via low temperature photoluminescence (PL), photoreflectance (PR), and temperature dependent time-resolved photoluminescence spectra. The vertical nonuniformity of Sb composition in GaAsSb is disclosed by low temperature PL and PR analysis. Furthermore, time decay dynamics of PL emission between low Sb and high Sb regions are significantly different at low temperature with a fast decay and slow rise at the beginning stage, respectively. The results suggest carrier transfer from low Sb region into high Sb region should be included in time-resolved PL analysis.
keywords:GaAsSb, nonuniformity, carrier  localization, carrier  transferation
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