CdZnTe中富碲沉积相缺陷引起的液相外延HgCdTe薄膜表面缺陷
投稿时间:2018-03-05  修订日期:2018-04-27  点此下载全文
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作者单位E-mail
张阳 昆明物理研究所 57868509@qq.com 
吴军 昆明物理研究所  
木胜 昆明物理研究所  
左大凡 昆明物理研究所  
李东升 昆明物理研究所 lds@irdc-km.com 
基金项目:国防973项目(613230)
中文摘要:摘要:为了研究液相外延碲镉汞薄膜表面缺陷形成机制,采用光刻工艺结合化学腐蚀方法在碲锌镉衬底表面实现了网格化,研究了碲锌镉近表面富碲沉积相与外延薄膜表面缺陷的关系。结果表明:衬底近表面富碲沉积相会导致碲镉汞薄膜表面孔洞、类针形凹陷坑缺陷以及三角形凹陷坑聚集区;在液相外延过程中,高温碲镉汞熔液与CdZnTe衬底间的回熔作用可以减少与富碲沉积相相关的表面缺陷,薄膜表面缺陷与衬底表面富碲沉积相的匹配度与回熔深度负相关;回熔过程以及富碲沉积相形态、深度影响HgCdTe薄膜表面缺陷形态和分布。
中文关键词:富碲沉积相 液相外延 碲镉汞 碲锌镉 表面缺陷
 
Surface Defects of LPE growth of HgCdTe Film induced by Te-rich Precipitates in CdZnTe Substrates
Abstract:Abstract: Correlation between surface defects on LPE growth of HgCdTe films and Te-rich precipitates in CdZnTe substrates were studied. Results shown that three kinds of surface defects of LPE growth of HgCdTe film are as follows: surface crater defects , pinhole-like defects and concave pits, which related to the Te-rich precipitates in CdZnTe substrates. Substrate remelting process during liquid-phase epitaxial growth of HgCdTe film reduced numbers of defects induced by Te-rich precipitates in CdZnTe substrates. There was the negative correlation between the depth of the remelting layer and the matching of the surface defects and the Te-rich precipitates. The remelting of substrate surface layers during the liquid-phase epitaxial process affect the number and morphologies of HgCdTe surface defects, as well as the depth and the morphologies of the Te-rich precipitates.
keywords:Te-rich precipitates LPE HgCdTe CdZnTe surface defects
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