(英)InAs/AlSb异质结的Pd/Ti/Pt/Au 合金化欧姆接触
投稿时间:2018-01-19  修订日期:2018-05-19  点此下载全文
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作者单位E-mail
张静 西安电子科技大学 宽带隙半导体技术国家重点学科实验室 zhangjing6048@126.com 
吕红亮 西安电子科技大学 宽带隙半导体技术国家重点学科实验室 hllv@mail.xidian.edu.cn 
倪海桥 中国科学院半导体研究所超晶格国家重点实验室  
牛智川 中国科学院半导体研究所超晶格国家重点实验室  
张义门 西安电子科技大学 宽带隙半导体技术国家重点学科实验室  
张玉明 西安电子科技大学 宽带隙半导体技术国家重点学科实验室  
中文摘要:为了得到较低的接触电阻,研究了帽层未掺杂的InAs/AlSb 异质结的Pd/Ti/Pt/Au合金化欧姆接触。利用传输线模型(TLM)测量了接触电阻Rc。在最佳的快速热退火条件为275°C和20 s时,InAs/AlSb 异质结的Pd/Ti/Pt/Au接触电阻值为0.128 Ω·mm。TEM观察发现经过快速热退火后Pd已经扩散到半导体中有利于高质量欧姆接触的形成。研究表明经过Pd/Ti/Pt/Au 合金化欧姆接触后Rc有明显减小,适用于InAs / AlSb 异质结的应用。
中文关键词:欧姆接触  快速热退火  InAs/AlSb异质结
 
Pd/Ti/Pt/Au alloyed ohmic contact for InAs/AlSb heterostructures with the undoped InAs cap layer
Abstract:In order to achieve low contact resistances of InAs/AlSb heterostructures with the undoped InAs cap layer, Pd/Ti/Pt/Au alloyed ohmic contact has been investigated. The contact resistance Rc is evaluated by using transmission-line-model (TLM) measurements. A minimum of 0.128 Ω·mm has been obtained by using the optimal rapid thermal annealing (RTA) with the condition at temperature of 275 °C and annealing time of 20 s. The measurement from transmission electron microscopy (TEM) demonstrates that the Pd atoms diffuses into the semiconductor, which is beneficial to the formation of a high-quality ohmic contact during the rapid thermal annealing. This study shows that the contact resistance Rc is reduced significantly after Pd/Ti/Pt/Au alloyed ohmic contact, which is suitable for its application in InAs/AlSb heterostructures.
keywords:Ohmic contacts, rapid thermal annealing, InAs/AlSb heterostructures
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