Increasing the operating temperature for infrared detectors is critical to reduce the size， weight and power of infrared （IR） systems. Such systems are essential to implement a compact and low-cost production of IR systems. For the Kunming Institute of Physics （KIP）， HgCdTe standard p-on-n technology with indium doping and arsenic ion implantation technology has been optimized for many years and mid-wavelength IR （MWIR） detectors with excellent electro-optical performance were realized. This paper reports the latest results of the MWIR focal plane array （FPA） detector with a high operating temperature （HOT）. Performances of the 1024×768@10 μm pitch MW detector working above 150 K were presented. The detector presenting a cut-off wavelength above 4.97 μm at 150 K has been developed. The noise-equivalent temperature difference （NETD）， dark current and operability at different operating temperatures were attained. Additionally， the IR image taken with the MWIR HgCdTe-based FPA and processed at an operating temperature of 150 K was presented and retained an operability of 99.4%.