短波红外InGaAs焦平面研究进展
作者:
作者单位:

1.中国科学院上海技术物理研究所 传感技术国家重点实验室, 上海 200083;2.中国科学院上海技术物理研究所 中国科学院红外成像材料与器件重点实验室, 上海 200083

作者简介:

通讯作者:

中图分类号:

TN215

基金项目:

国家自然科学基金面上项目(62175250, 62075229);国家自然基金青年项目(62104238);上海市科技重大专项(2019SHZDZX01);上海市优秀学术带头人计划(21XD1404200);上海市学术科技启明星计划(21QA1410600)


Recent advances in short wavelength infrared InGaAs focal plane arrays
Author:
Affiliation:

1.State Key Laboratories of Transducer Technology, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China;2.Key Laboratory of Infrared Imaging Materials and Detectors, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China

Fund Project:

Supported by the National Natural Science Foundation of China (62175250, 62075229 and 62104238) ; the Shanghai Municipal Science and Technology Major Project (2019SHZDZX01); the Program of Shanghai Academic Research Leader (21XD1404200); the International Science and Technology Cooperation Program of Shanghai (20520711200).

  • 摘要
  • |
  • 图/表
  • |
  • 访问统计
  • |
  • 参考文献
  • |
  • 相似文献
  • |
  • 引证文献
  • |
  • 资源附件
  • |
  • 文章评论
    摘要:

    围绕新一代遥感探测仪器应用需求,中国科学院上海技术物理研究所在短波红外InGaAs焦平面探测器领域取得了一系列进展。通过低缺陷外延材料、焦平面芯片制备工艺和低噪声读出电路技术研究,研制实现了最大规模达2560×2048元的10 μm中心距1~1.7 μm InGaAs焦平面探测器,峰值探测率优于1.0×1013 cmHz1/2/W,有效像素率达到99.7%;研制实现了1280×1024元15 μm中心距的1~2.5 μm延伸波长探测器,峰值探测率优于5.0×1011 cmHz1/2/W;发展了新体制新结构器件,研制了单片集成4向偏振功能的160×128元偏振焦平面探测器,消光比优于37:1;研制了64×64元盖革雪崩焦平面探测器,时间分辨率达到0.8 ns。

    Abstract:

    To meet with the ongoing demand for the development of higher performance space remote sensing instruments, a series of progress in short wavelength infrared InGaAs focal plane arrays (FPAs) has been achieved in Shanghai Institute of Technical Physics. Through the continuous research efforts devoted to the low-defect density epitaxial materials, the FPA processing technologies as well as the low noise read-out circuits, a 10-μm-pitch 1~1.7 μm InGaAs FPA with an array format up to 2560×2048, a pixel operability up to 99.7% and a high peak detectivity up to 1.1×1013 cmHz1/2/W is realized. A 15-μm-pitch 1~2.5 μm extended wavelength InGaAs FPA with an array format of 1280×1024 and a high peak detectivity up to 5.0×1011 cmHz1/2/W is also achieved. New principle FPA detectors are also developed, which are a monolithic integrated four-direction polarized 160×128 InGaAs FPA with a high extinction ratio up to 37:1, and a 64×64 InGaAs Geiger-mode avalanche FPA with a fine timing resolution down to 0.8 ns.

    参考文献
    相似文献
    引证文献
引用本文

李雪,龚海梅,邵秀梅,李淘,黄松垒,马英杰,杨波,朱宪亮,顾溢,方家熊.短波红外InGaAs焦平面研究进展[J].红外与毫米波学报,2022,41(1):129~138]. LI Xue, GONG Hai-Mei, SHAO Xiu-Mei, LI Tao, HUANG Song-Lei, MA Ying-Jie, YANG Bo, ZHU Xian-Liang, GU Yi, FANG Jia-Xiong. Recent advances in short wavelength infrared InGaAs focal plane arrays[J]. J. Infrared Millim. Waves,2022,41(1):129~138.]

复制
分享
文章指标
  • 点击次数:
  • 下载次数:
  • HTML阅读次数:
  • 引用次数:
历史
  • 收稿日期:2022-01-01
  • 最后修改日期:2022-01-11
  • 录用日期:2022-01-12
  • 在线发布日期: 2022-01-23
  • 出版日期: