高温热退火对多层P-on-N结构HgCdTe的界面影响研究
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作者单位:

中国科学院上海技术物理研究所 红外材料与器件重点实验室,上海 200083

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中图分类号:

O471.5;TN305.3

基金项目:

中国科学院青年创新促进会项目


Effect of thermal annealing on the interface changes of multi-layer HgCdTe P-on-N materials grown by MBE
Author:
Affiliation:

Key Laboratory of Infrared Imaging Materials and Detectors, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China

Fund Project:

Supported by Youth Innovation Promotion Association, CAS

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    摘要:

    对高温热退火前后分子束外延(MBE)生长的多层P-on-N结构HgCdTe外延材料的界面变化进行研究。研究发现,高温热退火将引起HgCdTe外延材料界面层的改变,从而破坏原生结构。这种改变可以一定程度上通过工艺条件进行控制。同时,对热退火前后P-on-N结构变化进行了二维数值模拟,研究了不同变化对其能带结构和光电流的影响。

    Abstract:

    The interface changes of multi-layer HgCdTe P-on-N epitaxial materials grown by molecular beam epitaxy (MBE) before and after high temperature thermal annealing were studied. It is found that high temperature thermal annealing causes the change of the interface layer of HgCdTe P-on-N structure and destroy the original designed structure. This change can be controlled to some extent by thermal annealing conditions. At the same time, the structural changes of P-on-N before and after thermal annealing are simulated numerically, and the effects of different changes on the energy band and light current are studied.

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沈川,陈路,卜顺栋,刘仰融,何力.高温热退火对多层P-on-N结构HgCdTe的界面影响研究[J].红外与毫米波学报,2021,40(2):156~160]. SHEN Chuan, CHEN Lu, BU Shun-Dong, LIU Yang-Rong, HE Li. Effect of thermal annealing on the interface changes of multi-layer HgCdTe P-on-N materials grown by MBE[J]. J. Infrared Millim. Waves,2021,40(2):156~160.]

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  • 收稿日期:2020-05-11
  • 最后修改日期:2021-03-31
  • 录用日期:2020-05-29
  • 在线发布日期: 2021-03-30
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