表面微结构的高响应度Si基近红外光电探测器
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苏州大学 电子信息学院, 江苏 苏州 215006

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TN215;TN362

基金项目:

国家自然科学基金 61774108国家自然科学基金(61774108)


High responsivity Si-based near-infrared photodetector with surface microstructure
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Affiliation:

School of Electronic and Information Engineering, Soochow University, Suzhou 215006, China

Fund Project:

National Natural Science Foundation of China 61774108Supported by National Natural Science Foundation of China (61774108)

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    摘要:

    为了使Si基光电探测器应用到近红外光波段,并提升其对光的响应度。通过等离子体光刻在硅基光电探测器表面制备规则有序的微结构阵列,另外通过原子层沉积(ALD)在微结构表面生长一层膜,研究它的抗反射和钝化作用。对比测量器件的表面反射率和特性曲线,并计算器件在808近红外光下的光响应度。通过计算发现器件的响应度由最初的0.063提高到0.83

    Abstract:

    To apply Si-based photodetectors in the near-infrared band and improve their responsivity. A regular and orderly microstructure array was formed on the surface of silicon-based photodetectors by plasma lithography. Besides, an film was grown on the microstructure surface by atomic layer deposition (ALD) to study its anti-reflection and passivation effects. The surface reflectivity and characteristic curves of the device were compared and the light responsivity of the device under 808 near-infrared light was calculated. It is found that the responsivity of the device is increased from 0.063 to 0.83.

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引用本文

唐玉玲,夏少杰,陈俊.表面微结构的高响应度Si基近红外光电探测器[J].红外与毫米波学报,2020,39(4):417~421]. TANG Yu-Ling, XIA Shao-Jie, CHEN Jun. High responsivity Si-based near-infrared photodetector with surface microstructure[J]. J. Infrared Millim. Waves,2020,39(4):417~421.]

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历史
  • 收稿日期:2019-12-08
  • 最后修改日期:2020-07-27
  • 录用日期:2020-02-10
  • 在线发布日期: 2020-07-24
  • 出版日期: