CdTe film was deposited on the HgCdTe crystalline surface under low temperature condition using Ar beam sputtering deposition technique. The surface of different areas of a HgCdTe wafer was passivated with CdTe film and anodic oxide film. The non equilibrium carriers lifetimes of the HgCdTe crystals of different surface passivants were obtained using photo conductivity decay technique. The surface recombination velocities of the HgCdTe surfaces passivated with the CdTe film and anodic oxide film were also worked out. The results show that the HgCdTe sample passivated with the sputtering CdTe film has an even better interface quality as compared with the HgCdTe sample passivated with the well developed anodic oxide technology.