The concentrations and mobilities of bulk electron, bulk hole and interface electron were obtained, respectively, by the mobility specrum analysis (MSA) for n type HgCdTe film grown by MBE and LPE techniques. The changes of concentration and mobility for bulk and interface electrons versus temperature were also derived from the MSA, which agree well with the theoretical analysis.
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桂永胜 郑国珍. HgCdTe多载流子体系的迁移率谱分析[J].红外与毫米波学报,1998,17(5):327~332]. GUI Yong Sheng ZHENG Guo Zhen GUO Shao Ling CHU Jun Hao. MOBILITY SPECTRUM ANALYSIS OF MULTI CARRIER SYSTEM IN HgCdTe[J]. J. Infrared Millim. Waves,1998,17(5):327~332.]