叠层HgCdTe光导器件载流子浓度分布及器件性能
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TN215

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CARRIER CONCENTRATION DISTRIBUTION AND PERFORMANCE OF OVERLAP PHOTOCONDUCTIVE DETECTOR
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    摘要:

    根据M.A.Kinch提出了的叠层结构,从解一维连续性方程出发,对有叠层和无叠层器件光生载流子浓度空间分布进行了计算和分析,结果表明,叠层结构相当提供一个少数载流子存储区,可有效抑制扫出效应,提高体内光生载流子的平均浓度,从而提高响应率,实验上采用两种工艺实现了有叠层结构,并给出了器件性能的测量结果。

    Abstract:

    Carrier concentration distribution of overlap and non overlap photoconductive detectors was calculated and analyzed by solving the one dimensional ambipolar transport equation , according to the overlap structure proposed by M.A.Kinch. The results show that the overlap structure offers a region storing the minority carriers, which suppresses the sweepout and increases the average photo induced carrier concentration, thus improving the responsivily. The overlap structure was implemented by means of two kinds of technologies, and the measured data were given in this paper.

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胡晓宁 方家熊.叠层HgCdTe光导器件载流子浓度分布及器件性能[J].红外与毫米波学报,1996,15(4):285~289]. Hu Xiaoning, Fang Jiaxiong. CARRIER CONCENTRATION DISTRIBUTION AND PERFORMANCE OF OVERLAP PHOTOCONDUCTIVE DETECTOR[J]. J. Infrared Millim. Waves,1996,15(4):285~289.]

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