The N-doped and N-undoped single crystal silicon under different conditions was investigated by means of Fourier Transfosm Infrared Spectroscope (FTIR) at room temperature (300K) and low temperature (SK). The experiments pointed out that the 1030cm-1, 1000cm-1 and 806cm-1 optical absorption lines are related to the nitrogenoxygen complex in nitrogen-doped CZ silicon.
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杨德仁,阙端麟.硅单晶中氮－氧复合体的红外吸收研究[J].红外与毫米波学报,1995,14(6):]. Yang Deren, Qne Duanlin. INFRARED ABSORPTION STUDY OF NITROGEN-OXYGEN COMPLEX IN SILICON[J]. J. Infrared Millim. Waves,1995,14(6).]