The defect levels in Hg1-xCdxTe p+n junction photodiodes were studied by using Deep Levels Transient Spectroscopy (DLTS). Two electron traps, E(0.06), and E (0.15) and two hole traps, H (0.075) and H (0.29), were obtained, respectively. Their concentrations are only a few percent of shallow levels. According to these characteristic parameters, the minority lifetime of the devices and the product of area times the dynamic resistance at zero bias are estimated. The nature of some defect levels is suggested, too.