局域在浅施主能级上的电子输运行为研究
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TN213 O471.1

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STUDY OF TRANSPORT BEHAVIOR OF ELECTRONS LOCALIZED IN SHALLOW IMPURITY LEVEL
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    摘要:

    在0.3~4.2K的温度范围,测量了5块n-Hg_(1-x)Cd_xTe(x=0.17~0.22)样品在强磁场下的横向磁阻和霍尔电阻.在4.2K以下,随温度降低,霍尔电阻与磁场的关系改变了原来的经典行为,在磁场0.4T附近逐渐出现了一个类似二维系统的霍尔平台,平台正对应SdH振荡的极小值.观察到霍尔系数振荡和SdH振荡有一个90°的相位差,且SdH振荡呈现反常的温度效应,与量子霍尔效应中的弱耗散性电流很相似.用类氢施主和无序引起的局域能级上存在准迁移率边的模型能很好地解释实验结果.

    Abstract:

    Magnetotransport measurement is reported on five bulk n-Hg1-xCdxTe (x = 0.17 ~ 0.22) samples at low temperature from 0.3 K to 4.2K and high magnetic field up to 7T. With the decrease of temperature from 4.2 K, Hall resistance gradually deviates from its classical value and shows quantum behavior. The authors' experiments reveal that there is an incipient, nonquantized "Hall plateau", which coincides with the minima of the SdH oscillations near 0.4 T. This phenomenon is quite similar to the quantum Hall effect in two-dimensional systems. The 90?phase difference between Hall oscillation and SdH oscillation was observed, and the anomalous temperature effect of SdH oscillation was also discovered. Using the model of localization, the experimental data can be explained quite well.

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郑国珍 韦亚一.局域在浅施主能级上的电子输运行为研究[J].红外与毫米波学报,1994,13(5):347~351]. Zheng Guozhen Wei Yayi Shen Jinxi Guo Shaoling Shen Jie Tang Dingyuan. STUDY OF TRANSPORT BEHAVIOR OF ELECTRONS LOCALIZED IN SHALLOW IMPURITY LEVEL[J]. J. Infrared Millim. Waves,1994,13(5):347~351.]

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