Deep Level Transient Spectroscopy (DLTS) was used to study the irradiation-induced defects in GaAs (50A)/GaAlAs (50A) superlattice. The existence of metastability of such defects was demonstrated, and their transition temperature was studied. The reason why these characteristics can not be observed in the bulk materials is pointed out.
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封松林 周洁.超晶格电子辐照缺陷的亚稳态特性[J].红外与毫米波学报,1994,13(3):161~164]. Feng Songlin, Zhou Jie, Lu Liwu. METASTABLE CHARACTERISTICS OF ELECTRON IRRADIATION-INDUCED DEFECTS IN SUPERLATTICES[J]. J. Infrared Millim. Waves,1994,13(3):161~164.]