The electrical behavior of light modulator in GaAs/GaAlAs single quantum wen was investigated by using admittance spectroscopy technique. The physical phenomenon of delocalization in the electron and hole subbands of quantum well under electric field was observed.
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周洁 封松林. GaAs／GaAlAs单量子阱光调制器电学行为[J].红外与毫米波学报,1994,13(1):65~68]. Zhou Jie, Feng Songlin, Lu Liwu, Sun Jinglan. ELECTRICAL BEHAVIOR OF LIGHT MODULATOR IN GaAS/GaAlAs SINGLE QUANTUM WELL STRUCTURE[J]. J. Infrared Millim. Waves,1994,13(1):65~68.]