The transient decay response of HgCdTe PC and SPRITE detectors have been calculated and observed. The results of theory and experiment are in good agreement. At high bias fields, the decay processes of PC and SPRITE detectors are with ramp and rec- tangular waveforms, respectively. According to the curve of decay process, the excess carri- er ambipolar mobility can be determined.
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李言谨 朱龙源. HgCdTe光导及扫积型器件的瞬态响应[J].红外与毫米波学报,1992,11(4):271~276]. Li Yanjin, Zhu Longyuan, Fang Jiaxiong. TRANSIENT RESPONSE OF HgCdTe PC AND SPRITE DETECTORS[J]. J. Infrared Millim. Waves,1992,11(4):271~276.]