(英)STI埋层的高光电流和低暗计数率单光子雪崩二极管
投稿时间:2018-06-24  修订日期:2019-03-22  点此下载全文
引用本文:金湘亮,彭亚男,曾朵朵,杨红姣.(英)STI埋层的高光电流和低暗计数率单光子雪崩二极管[J].红外与毫米波学报,2019,38(2):149~153].JIN Xiang-Liang,PENG Ya-Nan,ZENG Duo-Duo,YANG Hong-Jiao.STI-Bounded Single-Photon Avalanche Diode with High Photo Current and Low Dark Rate[J].J.Infrared Millim.Waves,2019,38(2):149~153.]
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作者单位E-mail
金湘亮 湘潭大学,湖南师范大学 jinxl@xtu.edu.cn 
彭亚男 湘潭大学 pengynabc@163.com 
曾朵朵 湘潭大学  
杨红姣 湘潭大学  
基金项目:国家自然科学基金项目(面上项目,重点项目,重大项目),湖南省青年学者自然科学基金。
中文摘要:本文研究和分析了一种0.18-μm CMOS工艺单光子雪崩二极管(SPAD),其结构能抑制过早的边缘击穿(PEB),同时获得较大的光电流和低的暗计数率(DCR)。该SPAD由p-well/deep n-well的感光结,deep n-well向上扩散形成的区域和边缘Shallow Trench Isolation(STI)共同形成的保护环组成。通过测试确定了与光电流和暗率有关的STI层的大小。结果证明,在STI层与保护环之间的重叠区域为1-μm 时,SPAD的暗计数率和光电流最佳。此外,直径为10-μm的圆形SPAD器件的暗计数率为208Hz,且在波长为510nm时峰值光子探测概率为20.8%,此时具有低的暗计数率和高的探测效率以及宽的光谱响应特性。
中文关键词:单光子雪崩二极管  边缘击穿  暗计数率  互补金属氧化物半导体  光子探测概率
 
STI-Bounded Single-Photon Avalanche Diode with High Photo Current and Low Dark Rate
Abstract:A 0.18-μm CMOS process single photon avalanche diode (SPAD) was examined in this study in an effort to inhibit premature edge breakdown (PEB) and secure large photo current and low dark count rate (DCR). The SPAD consists of a p-well/deep n-well photosensitive junction and a guard ring as-formed by a deep n-well up-diffused region and an edge STI. The size of the STI layer related to the light current and dark rate was determined via test. The results indicate that the photo current and dark count of the SPAD are optimal when the overlapping length between the STI and guard ring is 1-μm at room temperature. The SPAD with 10-μm diameter has high photon detection probability (PDP), wide spectral response, dark count rate as low as 208 Hz, and 20.8% peak PDP when the wavelength is 510 nm.
keywords:single-photon avalanche diode (SPAD), premature edge breakdown (PEB), dark count rate (DCR), complementary metal oxide semiconductor (CMOS), photon detection probability (PDP)
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