光驱动宽频带可调谐太赫兹吸波器设计
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1.武汉科技大学;2.华中科技大学

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国家自然科学(批准号:U1435209,61605147),湖北省自然科学(批准号:2017CFB588),武汉科技大学研究生创新(批准号:JCX2016012)和大学生创新(批准号:17ZRB143).


Design of a photo-excited broadband tunable terahertz absorber
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1.School of Information Science and Engineering,Wuhan University of Science and Technology,Wuhan;2.School of Optical and Electronic Information,Huazhong University of Science and Technology,Wuhan

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    摘要:

    本文基于光敏材料硅(Si)设计了一种宽频带极化不敏感的光驱动可调谐太赫兹超材料吸波器(metamaterial absorber,简称MMA)。该可调谐太赫兹MMA基本单元结构由嵌入光敏硅的紧凑开缝环谐振器结构、中间介质隔离层与金属底板构成。硅的电导率随着入射光的强度而发生改变,从而使太赫兹MMA工作频率范围和吸波性能得到有效的调节。数值计算结果表明:当硅电导率在1.0×103 S/m到5.0×105 S/m范围内动态调节时,该MMA吸波特性在0.442THz到0.852THz范围内动态调节。另外,其相对调节带宽达到63.37%,吸收率调制深度达到60.22%。进一步的数值计算结果表明我们所设计的MMA具备极化不敏感和宽入射角的特性。

    Abstract:

    A photo-excited and polarization insensitive broadband tunable terahertz metamaterial absorber (MMA) based on the photo-sensitive material of silicon (Si) was proposed. The unit-cell structure of this MMA is consisting of compact split-ring resonator structure filled with silicon, mediate medium layer and metal ground-plane. The working frequency and absorption intensity of this terahertz MMA could be effectively tuned, when the conductivity of silicon was changed by the varied incident optical intensity. The simulation results demonstrate that this MMA is dynamically adjusted in the frequency range from 0.852THz to 0.442THz when the conductivity of silicon increases from 1.0×103 S/m to the 5.0×105 S/m. In addition, its relative bandwidth is as much as 63.37% and absorption modulation depth is up to 60.22%. The further simulation indicates that MMA has characteristics of polarization insensitive and wide incident angle.

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程用志,左轩,黄木林,王童年,龚荣洲.光驱动宽频带可调谐太赫兹吸波器设计[J].红外与毫米波学报,2019,38(1):97~102]. CHENG Yong-Zhi, ZUO Xuan, HUANG Mu-Lin, WANG Tong-Nian, GONG Rong-Zhou. Design of a photo-excited broadband tunable terahertz absorber[J]. J. Infrared Millim. Waves,2019,38(1):97~102.]

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  • 收稿日期:2018-01-22
  • 最后修改日期:2018-04-12
  • 录用日期:2018-04-13
  • 在线发布日期: 2019-03-12
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