InAs/AlSb异质结的Pd/Ti/Pt/Au合金化欧姆接触
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西安电子科技大学 宽带隙半导体技术国家重点学科实验室,西安电子科技大学 宽带隙半导体技术国家重点学科实验室,中国科学院半导体研究所,超晶格国家重点实验室,中国科学院半导体研究所,超晶格国家重点实验室,西安电子科技大学 宽带隙半导体技术国家重点学科实验室,西安电子科技大学 宽带隙半导体技术国家重点学科实验室

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Pd/Ti/Pt/Au alloyed ohmic contact for InAs/AlSb heterostructures with the undoped InAs cap layer
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School of Microelectronics, Xidian University and Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices,School of Microelectronics, Xidian University and Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices,State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences,State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences,School of Microelectronics, Xidian University and Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices,School of Microelectronics, Xidian University and Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices

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This work was supported by Advance Research Foundation of China (Grant No. 914xxx803- 051xxx111), National Defense Advance Research project (Grant No.315xxxxx301) and National Defense Innovation Program (Grant No.48xx4).

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    摘要:

    为了得到较低的接触电阻, 研究了帽层未掺杂的InAs/AlSb异质结的Pd/Ti/Pt/Au合金化欧姆接触.利用传输线模型 (TLM) 测量了接触电阻Rc.在最佳的快速热退火条件为275℃和20s时, InAs/AlSb异质结的Pd/Ti/Pt/Au接触电阻值为0.128Ω·mm.TEM观察发现经过快速热退火后Pd已经扩散到半导体中有利于高质量欧姆接触的形成.研究表明经过Pd/Ti/Pt/Au合金化欧姆接触后Rc有明显减小, 适用于InAs/AlSb异质结的应用.

    Abstract:

    In order to achieve lowcontact resistances of InAs/AlSb heterostructures with the undoped In As cap layer, Pd/Ti/Pt/Au alloyed ohmic contact has been investigated.The contact resistance Rcis evaluated by using transmission-line-model (TLM) measurements.A minimum of 0.128 Ω·mm has been obtained by using the optimal rapid thermal annealing (RTA) with the condition at temperature of 275 ℃ and annealing time of 20 s.The measurement from transmission electron microscopy (TEM) demonstrates that the Pd atoms diffuses into the semiconductor, which is beneficial to the formation of a high-quality ohmic contact during the rapid thermal annealing.This study shows that the contact resistance Rcis reduced significantly after Pd/Ti/Pt/Au alloyed ohmic contact, which is suitable for its application in InAs/AlSb heterostructures.

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张静,吕红亮,倪海桥,牛智川,张义门,张玉明. InAs/AlSb异质结的Pd/Ti/Pt/Au合金化欧姆接触[J].红外与毫米波学报,2018,37(6):679~682]. ZHANG Jing, LYU Hong-Liang, NI Hai-Qiao, NIU Zhi-Chuan, ZHANG Yi-Men, ZHANG Yu-Ming. Pd/Ti/Pt/Au alloyed ohmic contact for InAs/AlSb heterostructures with the undoped InAs cap layer[J]. J. Infrared Millim. Waves,2018,37(6):679~682.]

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  • 收稿日期:2018-01-19
  • 最后修改日期:2018-05-19
  • 录用日期:2018-04-11
  • 在线发布日期: 2018-11-30
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