InAs/AlSb异质结的Pd/Ti/Pt/Au合金化欧姆接触
投稿时间:2018-01-19  修订日期:2018-05-19  点此下载全文
引用本文:张静,吕红亮,倪海桥,牛智川,张义门,张玉明.InAs/AlSb异质结的Pd/Ti/Pt/Au合金化欧姆接触[J].红外与毫米波学报,2018,37(6):679~682].ZHANG Jing,LYU Hong-Liang,NI Hai-Qiao,NIU Zhi-Chuan,ZHANG Yi-Men,ZHANG Yu-Ming.Pd/Ti/Pt/Au alloyed ohmic contact for InAs/AlSb heterostructures with the undoped InAs cap layer[J].J.Infrared Millim.Waves,2018,37(6):679~682.]
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作者单位E-mail
张静 西安电子科技大学 宽带隙半导体技术国家重点学科实验室 zhangjing6048@126.com 
吕红亮 西安电子科技大学 宽带隙半导体技术国家重点学科实验室 hllv@mail.xidian.edu.cn 
倪海桥 中国科学院半导体研究所超晶格国家重点实验室  
牛智川 中国科学院半导体研究所超晶格国家重点实验室  
张义门 西安电子科技大学 宽带隙半导体技术国家重点学科实验室  
张玉明 西安电子科技大学 宽带隙半导体技术国家重点学科实验室  
中文摘要:为了得到较低的接触电阻, 研究了帽层未掺杂的InAs/AlSb异质结的Pd/Ti/Pt/Au合金化欧姆接触.利用传输线模型 (TLM) 测量了接触电阻Rc.在最佳的快速热退火条件为275℃和20s时, InAs/AlSb异质结的Pd/Ti/Pt/Au接触电阻值为0.128Ω·mm.TEM观察发现经过快速热退火后Pd已经扩散到半导体中有利于高质量欧姆接触的形成.研究表明经过Pd/Ti/Pt/Au合金化欧姆接触后Rc有明显减小, 适用于InAs/AlSb异质结的应用.
中文关键词:欧姆接触  快速热退火  InAs/AlSb异质结
 
Pd/Ti/Pt/Au alloyed ohmic contact for InAs/AlSb heterostructures with the undoped InAs cap layer
Abstract:In order to achieve lowcontact resistances of InAs/AlSb heterostructures with the undoped In As cap layer, Pd/Ti/Pt/Au alloyed ohmic contact has been investigated.The contact resistance Rcis evaluated by using transmission-line-model (TLM) measurements.A minimum of 0.128 Ω·mm has been obtained by using the optimal rapid thermal annealing (RTA) with the condition at temperature of 275 ℃ and annealing time of 20 s.The measurement from transmission electron microscopy (TEM) demonstrates that the Pd atoms diffuses into the semiconductor, which is beneficial to the formation of a high-quality ohmic contact during the rapid thermal annealing.This study shows that the contact resistance Rcis reduced significantly after Pd/Ti/Pt/Au alloyed ohmic contact, which is suitable for its application in InAs/AlSb heterostructures.
keywords:Ohmic contacts, rapid thermal annealing, InAs/AlSb heterostructures
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