电子束蒸发CdTe覆盖Au掺杂HgCdTe真空退火的研究
投稿时间:2017-08-17  修订日期:2018-05-21  点此下载全文
引用本文:王溪,周松敏,孙常鸿,魏彦峰,沈灏,林春.电子束蒸发CdTe覆盖Au掺杂HgCdTe真空退火的研究[J].红外与毫米波学报,2018,37(4):399~402].Wang Xi,Zhou Song-Min,Sun Changhong,Wei Yan-Feng,Shen Hao,Lin Chun.Study of Annealing of Au Doped HgCdTe Covered by Electron Beam Evaporated CdTe[J].J.Infrared Millim.Waves,2018,37(4):399~402.]
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作者单位E-mail
王溪 中国科学院大学 wangxi08@126.com 
周松敏 中科院红外成像材料与器件重点实验室  
孙常鸿 中科院红外成像材料与器件重点实验室  
魏彦峰 中科院红外成像材料与器件重点实验室  
沈灏 中科院红外成像材料与器件重点实验室  
林春 中科院红外成像材料与器件重点实验室 chun_lin@mail.sitp.ac.cn 
中文摘要:本文对使用CdTe覆盖的HgCdTe材料在不同的温度下,进行了一系列的退火实验。研究发现,退火可以改善电子束蒸发CdTe的晶体状态,使CdTe和HgCdTe之间的界面状态得到改善。Au掺杂HgCdTe覆盖CdTe后,真空条件下退火,240℃和300℃对Au掺杂的浓度分布改变不大,Au掺杂的浓度几乎不变。但是,温度的不同会对汞空位的浓度产生显著的影响,因此退火温度不同会使载流子浓度明显不同。退火温度从240℃升高至300℃后,霍尔测试得到的载流子浓度从2×1016cm-3左右升高至5.5×1016cm-3左右。
中文关键词:Au掺杂HgCdTe、电子束蒸发CdTe、退火、载流子浓度、Au分布
 
Study of Annealing of Au Doped HgCdTe Covered by Electron Beam Evaporated CdTe
Abstract:In this report, series of annealing experiments under different temperature of Au-doped HgCdTe covered by CdTe have been implemented. The annealing process can improve the crystal state of electron beam evaporated CdTe layer. The interface between CdTe and HgCdTe can also be modified. The Au doping distribution in HgCdTe did not change after the vacuum annealing at 240℃ and 300℃. However, the Au element diffused into the CdTe cap layer significantly, leading to a higher concentration of (5-6)×1016cm-3. On the other hand, the concentration of mercury vacancy after various annealing processes was different due to the temperature-dependent diffusion mechanism. In general, the carrier concentration detected by HALL effect varied from 2×1016cm-3 to 5.5×1016 cm-3, when the annealing temperature was increased from 240℃ to 300℃.
keywords:Au doped HgCdTe, Electron beam evaporation CdTe, annealing, Carrier concentration, Distribution of Au
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