真空退火的CdTe/Au掺杂HgCdTe界面状态的影响
投稿时间:2017-08-17  修订日期:2018-05-21  点此下载全文
引用本文:王溪,周松敏,孙常鸿,魏彦峰,沈灏,林春.真空退火的CdTe/Au掺杂HgCdTe界面状态的影响[J].红外与毫米波学报,2018,37(4):399~402].WANG Xi,ZHOU Song-Min,SUN Chang-Hong,WEI Yan-Feng,SHEN Hao,LIN Chun.Annealing of Au doped HgCdTe covered by electron beam evaporated CdTe[J].J.Infrared Millim.Waves,2018,37(4):399~402.]
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作者单位E-mail
王溪 中国科学院大学 wangxi08@126.com 
周松敏 中科院红外成像材料与器件重点实验室  
孙常鸿 中科院红外成像材料与器件重点实验室  
魏彦峰 中科院红外成像材料与器件重点实验室  
沈灏 中科院红外成像材料与器件重点实验室  
林春 中科院红外成像材料与器件重点实验室 chun_lin@mail.sitp.ac.cn 
中文摘要:对使用CdTe覆盖的HgCdTe材料在不同温度下进行了一系列的退火实验.研究发现, 退火可以改善电子束蒸发CdTe的晶体状态, 使CdTe和HgCdTe之间的界面状态得到改善.Au掺杂HgCdTe覆盖CdTe后, 真空条件下退火, 240℃和300℃对Au掺杂的浓度分布改变不大, Au掺杂的浓度几乎不变.但是, 温度的不同会对汞空位的浓度产生显著的影响, 因此退火温度不同会使载流子浓度明显不同.退火温度从240℃升高至300℃后, 霍尔测试得到的载流子浓度从2×1016cm-3左右升高至5.5×1016cm-3左右.
中文关键词:Au掺杂HgCdTe  电子束蒸发CdTe  退火  载流子浓度  Au分布
 
Annealing of Au doped HgCdTe covered by electron beam evaporated CdTe
Abstract:In this report, series of annealing experiments under different temperatures of Au-doped Hg Cd Te covered by Cd Te have been implemented. The annealing process can improve the crystal state of electron beam evaporated Cd Te layer. The interface betw een Cd Te and Hg Cd Te can also be modified. The Au doping distribution in Hg Cd Te did not change after the vacuum annealing at 240℃ and300℃. How ever, the Au element diffused into the Cd Te cap layer significantly, leading to a higher concentration of ( 5 ~ 6) × 1016 cm-3. On the other hand, the concentration of mercury vacancy after various annealing processes w as different due to the temperature-dependent diffusion mechanism. In general, the carrier concentration measured by HALL effect varied from 2 × 1016 cm-3 to 5. 5 × 1016 cm-3, when the annealing temperature was increased from 240℃ to 300℃.
keywords:Au doped HgCdTe, electron beam evaporation CdTe, annealing, carrier concentration, distribution of Au
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