锗薄膜在低温下的折射率研究
投稿时间:2017-06-24  修订日期:2017-09-01  点此下载全文
引用本文:徐嶺茂,周晖,张凯峰,郑军,李坤,王济洲,王多书.锗薄膜在低温下的折射率研究[J].红外与毫米波学报,2018,37(1):11~14].XU Ling-Mao,ZHOU Hui,ZHANG Kai-Feng,ZHENG Jun,LI Kun,WANG Ji-Zhou,WANG Duo-Shu.Refractive index of Ge film at low temperature[J].J.Infrared Millim.Waves,2018,37(1):11~14.]
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作者单位E-mail
徐嶺茂 兰州空间技术物理研究所 xulm1990@163.com 
周晖 兰州空间技术物理研究所 zhouhui510@sina.com 
张凯峰 兰州空间技术物理研究所  
郑军 兰州空间技术物理研究所  
李坤 兰州空间技术物理研究所  
王济洲 无锡泓瑞航天科技有限公司  
王多书   
基金项目:国防基础科研项目
中文摘要:利用电子束蒸发方法在双面抛光的ZnSe基底上镀制单层Ge薄膜.在80 K~300 K温度范围内,采用PerkinElmer Frontier傅里叶变换红外光谱仪低温测试系统每20 K测量Ge单层在2~15 μm波长范围的透射率.采用全光谱反演拟合方法得到Ge单层在不同温度下的折射率.结果显示,Ge单层折射率均随波长增大而减小,且变化趋势基本相同.利用Cauchy色散公式对折射率波长色散关系进行拟合,得到Ge薄膜材料折射率温度/波长色散表达式为:n(λ,T)=3.29669+0.00015T+5.96834×10-6T2+0.41698λ2+0.17384λ4.最后,验证了Ge单层膜折射率温度/波长色散公式的准确性.
中文关键词:Ge膜,红外光学薄膜,折射率温度系数
 
Refractive index of Ge film at low temperature
Abstract:Germanium (Ge) films with physical thickness of 1600nm was deposited on ZnSe substrates by an electron beam evaporation system. The transmittance of Ge film in the range of 2 to 15 μm was measured by a PerkinElmer FTIR cryogenic testing system from 80 K to 300 K with a step length of 20 K. Then, the relationship between the refractive index and wavelength in the 2~12 μm region at different temperatures was obtained by the full spectrum inversion method fitting. It can be seen that the relationship confirms to the Cauchy formula. The relationship between the refractive index of Ge film and the temperature / wavelength can be expressed as n(λ,T)=3.29669+0.00015T+5.96834×10-6T2+0.41698λ2+0.17384λ4, which was obtained by the fitting method based on the Cauchy formula. Finally, the accuracy of the formula was verified by comparing the theoretical value obtained by the formula with the measured result.
keywords:infrared film,Ge film,refractive index
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