多胞MOSFET器件的射频建模和参数提取
投稿时间:2017-02-24  修订日期:2017-04-20  点此下载全文
引用本文:周影,于盼盼,高建军.多胞MOSFET器件的射频建模和参数提取[J].红外与毫米波学报,2017,36(5):550~554].ZHOU Ying,YU Pan-Pan,GAO Jian-Jun.Radio-Frequency modeling and parameters extraction of multi-cell MOSFET device[J].J.Infrared Millim.Waves,2017,36(5):550~554.]
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作者单位E-mail
周影 华东师范大学 信息科学技术学院 18801965859@163.com 
于盼盼 华东师范大学 信息科学技术学院 52141214001@ecnu.cn 
高建军 华东师范大学 信息科学技术学院 jjgao@ee.ecnu.edu.cn 
基金项目:61474044,国家自然科学基金项目(面上项目,重点项目,重大项目)
中文摘要:对纳米级金属氧化物半导体场效应管器件提出了改进的小信号模型.该改进模型中综合考虑了馈线的趋肤效应和器件多胞结构的影响.提取过程中, 根据可缩放规律, 由传统模型的参数推导出元胞参数.将模型应用于8×0.6×12 μm (栅指数×栅宽×元胞数量)、栅长为90 nm的MOSFET器件在1~40 GHz范围内的建模, 测试所得S参数和模型仿真所得S参数能够高度地吻合.
中文关键词:MOSFET器件、小信号模型、趋肤效应、等效电路、参数提取、半导体器件建模
 
Radio-Frequency modeling and parameters extraction of multi-cell MOSFET device
Abstract:An improved small-signal model for nanometer metal-oxide-semiconductor field-effect transistor (MOSFET) device is presented in this paper. The skin effect and multiple-cell effect are both taken into account. In the extracting procedure, the parameters of elementary cells are determined from the conventional model based on the scalable rules. This small-signal model was validated by the good agreement between measured and simulated S-parameters of 8×0.6×12 μm (number of gate fingers×unit gatewidth×cells) 90-nm gatelength MOSFET under three bias points up to 40 GHz.
keywords:MOSFET, small-signal model, skin effect, equivalent circuits, parameter extraction, semiconductor device modeling
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