InGaAs/InP单光子雪崩光电二极管InP顶层掺杂研究
投稿时间:2016-12-12  修订日期:2017-04-20  点此下载全文
引用本文:李彬.InGaAs/InP单光子雪崩光电二极管InP顶层掺杂研究[J].红外与毫米波学报,2017,36(4):420~424].LI Bin.Study of InP cap layer doping density in InGaAs/InP Single-photon Avalanche Diode[J].J.Infrared Millim.Waves,2017,36(4):420~424.]
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作者单位E-mail
李彬 中国电子科技集团公司第四十四研究所 lbatcq@163.com 
基金项目:中国电子科技集团创新基金项目(KJ1402011)
中文摘要:通过理论计算和对比实验研究了InGaAs/InP单光子雪崩光电二极管中InP顶层掺杂浓度对于器件性能的影响。理论结果显示InP顶层的掺杂浓度越低越有利于抑制边缘击穿、降低隧穿暗载流子产生速率、提高雪崩击穿几率。实验结果显示顶层非故意掺杂的器件在223K下获得了20%的单光子探测效率和1kHz的暗计数率,其单光子探测效率比顶层掺杂浓度为5E15/cm^3的器件高3%~8%,而暗计数率低一个量级。结果表明降低InP顶层的掺杂浓度有利于提高器件性能。
中文关键词:InGaAs/InP  单光子雪崩光电二极管  顶层  掺杂浓度  
 
Study of InP cap layer doping density in InGaAs/InP Single-photon Avalanche Diode
Abstract:The influence of the InP cap layer doping density of InGaAs/InP SPAD is studied through theoretical calculation and comparative experiment. Theoretical results show that lower cap layer doping density is beneficial to suppress premature edge breakdown, reduce tunneling carrier generation rate, and increase breakdown probability. Experimental results show that devices with unintentionally doped cap layer have achieved 20% single photon detection efficiency and 1 kHz dark count rate at 223K. Compared to devices with cap layer doping density of 5E15/cm^3, the single photon detection efficiency increases by 3%~8%, and the dark count rate decreases by about an order of magnitude. It is demonstrated that reduce the cap layer doping density is beneficial to improve the performance of InGaAs/InP SPAD.
keywords:InGaAs/InP  Single-photon Avalanche Diode  cap layer  doping density  
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