Te元素掺杂Bi2Se3拓扑绝缘体纳米线的反弱局域效应
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湖北工业大学 太阳能高效利用湖北省协同创新中心,湖北工业大学 太阳能高效利用湖北省协同创新中心,中国科学技术大学合肥微尺度物质科学国家实验室,中国科学技术大学合肥微尺度物质科学国家实验室,湖北工业大学 太阳能高效利用湖北省协同创新中心,湖北工业大学 太阳能高效利用湖北省协同创新中心,湖北工业大学 太阳能高效利用湖北省协同创新中心,湖北工业大学 电气与电子工程学院,中国科学院上海技术物理研究所 红外物理国家重点实验室,中国科学院上海技术物理研究所 红外物理国家重点实验室

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国家自然科学基金项目(面上项目,重点项目,重大项目)


Weak antilocalization effect in Tellurium-doped Bi2Se3 topological insulator nanowires
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Hubei Collaborative Innovation Center for High-efficiency Utilization of Solar Energy,Hubei University of Technology,Hubei Collaborative Innovation Center for High-efficiency Utilization of Solar Energy,Hubei University of Technology,Hefei National Laboratory for Physical Sciences at the Microscale,University of Science and Technology of China,Hefei National Laboratory for Physical Sciences at the Microscale,University of Science and Technology of China,Hubei Collaborative Innovation Center for High-efficiency Utilization of Solar Energy,Hubei University of Technology,Hubei Collaborative Innovation Center for High-efficiency Utilization of Solar Energy,Hubei University of Technology,Hubei Collaborative Innovation Center for High-efficiency Utilization of Solar Energy,Hubei University of Technology,School of Electrical and Electronic Engineering,Hubei University of Technology,National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences,National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences

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    摘要:

    采用Au催化的固-液-气(VLS)方法制备了单晶Bi2Se3和Bi2(TexSe1-x)3 纳米线, 研究了单根纳米线器件的输运性质.在对单根Bi2(TexSe1-x)3(x=0.26)纳米线的低温磁输运测试中观察到反弱局域效应, 说明样品中存在较强的自旋-轨道耦合.结果表明, Te掺杂可以有效抑制体电导对输运过程的影响.通过对不同温度下的磁电导曲线进行拟合, 得到了电子的退相干长度lφ , lφ 从1.5 K时的389 nm减小至20 K时的39 nm, 遵循lφ∝T-0.96指数变化规律.分析表明, 在Te掺杂样品的输运过程中, 电子-电子散射和电子-声子散射均起到了十分重要的作用.

    Abstract:

    Single-crystalline Bi2Se3 and Bi2(TexSe1-x)3 nanowires were synthesized via Au catalytic vapor-liquid-solid (VLS) growth method. Electronic properties of the surface states in individual Bi2(TexSe1-x)3 (x=0.26) nanowire were studied by low-temperature magnetotransport measurement. Weak antilocalization (WAL) effect was found, suggesting strong spin-orbit coupling in our samples. It is indicated that the bulk effect can be suppressed effectively by the Tellurium (Te) doping. By fitting the magnetoconductance curves at magnetic field up to 7 T measured at different temperatures, the extracted dephasing length lφ decreases from 389 nm at 1.5 K to 39 nm at 20 K, which can be well described by the power law lφ∝T-0.96. It can be reasonably deduced that both the electron-electron scattering and the electron-phonon scattering play important roles in the Te-doped sample.

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田锋,周远明,张小强,魏来明,梅菲,徐进霞,蒋妍,吴麟章,康亭亭,俞国林. Te元素掺杂Bi2Se3拓扑绝缘体纳米线的反弱局域效应[J].红外与毫米波学报,2017,36(3):270~275]. TIAN Feng, ZHOU Yuan-Ming, ZHANG Xiao-Qiang, WEI Lai-Ming, MEI Fei, XU Jin-Xia, JIANG Yan, WU Lin-Zhang, KANG Ting-Ting, YU Guo-Lin. Weak antilocalization effect in Tellurium-doped Bi2Se3 topological insulator nanowires[J]. J. Infrared Millim. Waves,2017,36(3):270~275.]

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  • 收稿日期:2016-11-14
  • 最后修改日期:2016-12-15
  • 录用日期:2016-12-19
  • 在线发布日期: 2017-06-20
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