(英)基于量子阱带间跃迁的红外探测器原型器件
投稿时间:2016-08-23  修订日期:2016-09-13  点此下载全文
引用本文:刘洁,王禄,江洋,马紫光,王文奇,孙令,贾海强,王文新,陈弘.(英)基于量子阱带间跃迁的红外探测器原型器件[J].红外与毫米波学报,2017,36(2):129~134].Jie Liu?,Lu Wang?,Yang Jiang,Ziguang Ma,Wenqi Wang,Ling Sun,Haiqiang Jia,Wenxin Wang,Hong Chen..A prototype photon detector based on interband transition of quantum wells[J].J.Infrared Millim.Waves,2017,36(2):129~134.]
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作者单位E-mail
刘洁 中国科学院物理研究所 xue015@163.com 
王禄 中国科学院物理研究所  
江洋 中国科学院物理研究所  
马紫光 中国科学院物理研究所  
王文奇 中国科学院物理研究所  
孙令 中国科学院物理研究所  
贾海强 中国科学院物理研究所  
王文新 中国科学院物理研究所  
陈弘 中国科学院物理研究所 hchen@iphy.ac.cn 
中文摘要:近期,实验发现PN结中局域载流子具有极高提取效率,并导致吸收系数的大幅度增加。本文报道基于上述现象的新型量子阱带间跃迁红外探测器原型器件的性能。利用含有InGaAs/GaAs多量子阱的PIN二极管,在无表面减反射膜的实验条件下,利用仅100nm的有效吸收厚度,实现了31%的外量子效率。基于该数值推算得到,量子阱的光吸收系数达3.7×104 cm-1,该数值高于传统透射实验测量结果一个数量级。上述实验结果指出,利用量子阱带间跃迁工作机制,有望实现新颖的器件结构设计和提高现有器件性能。
中文关键词:量子阱  带间跃迁  红外探测  增强吸收
 
A prototype photon detector based on interband transition of quantum wells
Abstract:Recently, a high localized carrier extraction efficiency and increasing of absorption coefficient was observed in low-dimensional semiconductors within a PN junction. Such phenomenon provides the possibility of fabricating novel high performance quantum well interband transition detector. In this work, we report the performance of the first photon detector based on the interband transition of strained InGaAs/GaAs quantum wells. The external quantum efficiency was measured to be 31% using only 100nm effective absorption thickness without an anti-reflection layer. Such high value leads to an absorption coefficient of 3.7×104 cm-1 which is obviously larger than previously reported values. The results here demonstrate the possibility of fabricating high performance and low cost infrared photon detectors.
keywords:quantum well  interband transtion  infrared detection  enhanced absorpition
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