替代衬底上的碲镉汞长波器件暗电流机理研究
投稿时间:2016-07-25  修订日期:2016-07-25  点此下载全文
引用本文:赵真典.替代衬底上的碲镉汞长波器件暗电流机理研究[J].红外与毫米波学报,2017,36(2):186~190].Zhao Zhendian.Research on Dark Current Mechanism of Long-Wavelength HgCdTe Infrared Detectors on Alternative Substrates[J].J.Infrared Millim.Waves,2017,36(2):186~190.]
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作者单位E-mail
赵真典 上海技术物理研究所 zzdkevin@126.com 
基金项目:国家重点基础研究发展计划(973计划)
中文摘要:本文基于暗电流模型,通过变温I-V分析长波器件(截止波长为9-10μm)的暗电流机理和主导机制。实验对比了不同衬底、不同成结方式、不同掺杂异质结构与暗电流成分的相关性。结果表明,对于B+离子注入的平面结汞空位n+-on-p结构,替代衬底上的碲镉汞(HgCdTe)器件零偏阻抗(R0)在80K以上与碲锌镉(CdZnTe)基碲镉汞器件结阻抗性能相当。但替代衬底上的HgCdTe因结区内较高的位错,使得从80K开始缺陷辅助隧穿电流(Itat)超过产生复合电流(Ig-r),成为暗电流的主要成分。与平面n+-on-p器件相比,采用原位掺杂组分异质结结构(DLHJ)的p+-on-n台面器件,因吸收层为n型,少子迁移率较低,能够有效抑制器件的扩散电流。80K下截止波长9.6μm,中心距30μm,替代衬底上的p+-on-n台面器件品质参数(R0A)为38 Ω·cm2,零偏阻抗较n-on-p结构的CdZnTe基碲镉汞器件高约15倍。但替代衬底上的p+-on-n台面器件仍受体内缺陷影响,在60K以下较高的Itat成为暗电流主导成分,其R0A相比CdZnTe基n+-on-p的HgCdTe差了一个数量级。
中文关键词:碲镉汞,红外焦平面,长波,替代衬底,暗电流
 
Research on Dark Current Mechanism of Long-Wavelength HgCdTe Infrared Detectors on Alternative Substrates
Abstract:The dark current characteristics of long-wavelength HgCdTe were analyzed, compared upon three types of devices. By I-V measurement under different temperatures and dark current mechanisms, the dominant currents of each device were clarified at different temperatures. It is demonstrated that the B+-implanted n+-on-p planar junction on silicon substrate is comparable to that on bulk cadmium zinc telluride (CdZnTe) substrate above 80K. However, the trap-assisted tunneling current becomes dominant under 80K due to the high density of dislocations. Compared with n+-on-p junctions, the p+-on-n double-layer heterojunction inhibits the diffusion current effectively, which is good matched with the calculation result upon the parameter, derived from I-V curve fitting. This p+-on-n diode has a R0A value of 38 Ω·cm2 at 80K, for the cut-off wavelength of 9.6 μm, while that of the n+-on-p diode on bulk CdZnTe is 2.5 Ω·cm2. Below 60K, the dislocations make the R0A value of the p+-on-n diode an order of magnitude lower than that of the n+-on-p diode on CdZnTe.
keywords:HgCdTe, infrared focal plane arrays, long wavelength, alternative substrate, dark current
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