替代衬底上的碲镉汞长波器件暗电流机理
作者:
作者单位:

上海技术物理研究所

作者简介:

通讯作者:

中图分类号:

基金项目:

国家重点基础研究发展计划(973计划)


Dark current mechanism of long-wavelength HgCdTe infrared detectors on alternative substrates
Author:
Affiliation:

Shanghai Institute of Technical Physics

Fund Project:

  • 摘要
  • |
  • 图/表
  • |
  • 访问统计
  • |
  • 参考文献
  • |
  • 相似文献
  • |
  • 引证文献
  • |
  • 资源附件
  • |
  • 文章评论
    摘要:

    本文基于暗电流模型,通过变温I-V分析长波器件(截止波长为9-10μm)的暗电流机理和主导机制。实验对比了不同衬底、不同成结方式、不同掺杂异质结构与暗电流成分的相关性。结果表明,对于B+离子注入的平面结汞空位n+-on-p结构,替代衬底上的碲镉汞(HgCdTe)器件零偏阻抗(R0)在80K以上与碲锌镉(CdZnTe)基碲镉汞器件结阻抗性能相当。但替代衬底上的HgCdTe因结区内较高的位错,使得从80K开始缺陷辅助隧穿电流(Itat)超过产生复合电流(Ig-r),成为暗电流的主要成分。与平面n+-on-p器件相比,采用原位掺杂组分异质结结构(DLHJ)的p+-on-n台面器件,因吸收层为n型,少子迁移率较低,能够有效抑制器件的扩散电流。80K下截止波长9.6μm,中心距30μm,替代衬底上的p+-on-n台面器件品质参数(R0A)为38 Ω·cm2,零偏阻抗较n-on-p结构的CdZnTe基碲镉汞器件高约15倍。但替代衬底上的p+-on-n台面器件仍受体内缺陷影响,在60K以下较高的Itat成为暗电流主导成分,其R0A相比CdZnTe基n+-on-p的HgCdTe差了一个数量级。

    Abstract:

    The dark current characteristics of long-wavelength HgCdTe were analyzed, compared upon three types of devices. By I-V measurement under different temperatures and dark current mechanisms, the dominant currents of each device were clarified at different temperatures. It is demonstrated that the B+-implanted n+-on-p planar junction on silicon substrate is comparable to that on bulk cadmium zinc telluride (CdZnTe) substrate above 80K. However, the trap-assisted tunneling current becomes dominant under 80K due to the high density of dislocations. Compared with n+-on-p junctions, the p+-on-n double-layer heterojunction inhibits the diffusion current effectively, which is good matched with the calculation result upon the parameter, derived from I-V curve fitting. This p+-on-n diode has a R0A value of 38 Ω·cm2 at 80K, for the cut-off wavelength of 9.6 μm, while that of the n+-on-p diode on bulk CdZnTe is 2.5 Ω·cm2. Below 60K, the dislocations make the R0A value of the p+-on-n diode an order of magnitude lower than that of the n+-on-p diode on CdZnTe.

    参考文献
    相似文献
    引证文献
引用本文

赵真典,陈路,傅祥良,王伟强,沈川,张彬,卜顺栋,王高,杨凤,何力.替代衬底上的碲镉汞长波器件暗电流机理[J].红外与毫米波学报,2017,36(2):186~190]. ZHAO Zhen-Dian, CHEN Lu, FU Xiang-Liang, WANG Wei-Qiang, SHEN Chuan, ZHANG Bin, BU Shun-Dong, WANG Gao, YANG Feng, HE Li. Dark current mechanism of long-wavelength HgCdTe infrared detectors on alternative substrates[J]. J. Infrared Millim. Waves,2017,36(2):186~190.]

复制
分享
文章指标
  • 点击次数:
  • 下载次数:
  • HTML阅读次数:
  • 引用次数:
历史
  • 收稿日期:2016-07-25
  • 最后修改日期:2016-07-25
  • 录用日期:2016-09-06
  • 在线发布日期: 2017-04-28
  • 出版日期: