(英)简单化学水浴法制备SnO2/p-Si异质结光电性能的研究
投稿时间:2016-07-15  最后修改时间:2016-10-29  点此下载全文
引用本文:何波,徐静,宁欢颇,赵磊,邢怀中,张磊.(英)简单化学水浴法制备SnO2/p-Si异质结光电性能的研究[J].红外与毫米波学报,2017,36(2):139~143].Bo He,Jing Xu,HuanPo Ning,Lei Zhao,HuaiZhong Xing,Lei Zhang.Fabrication and photoelectrical properties of SnO2/p-Si heterojunction structure via a simple chemical bath deposition method[J].J.Infrared Millim.Waves,2017,36(2):139~143.]
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作者单位E-mail
何波 东华大学 应用物理系 laserhebo@163.com 
徐静 上海大学分析测试中心  
宁欢颇 东华大学 应用物理系  
赵磊 上海大学物理系  
邢怀中 东华大学 应用物理系 xinghz@dhu.edu.cn 
张磊 上海微伏仪器科技有限公司  
基金项目:上海市联盟计划项目(LM201601),超细材料制备与应用教育部重点实验室( 华东理工大学) 开放课题基金(15Q10932),中央高校基本科研业务费(东华大学,16D110916)
中文摘要:SnO2薄膜沉积在晶硅衬底上通过一种简单化学水浴法以制备n-SnO2/p-Si异质结光电器件,该化学水浴法非常便宜和方便。采用XRD、XPS、紫外-可见光分光光度计和霍尔效应测试系统表征了SnO2薄膜的微结构、光学和电学性能,对SnO2/p-Si异质结的I-V曲线进行测试并分析,获得明显的光电转换特性。
中文关键词:SnO2薄膜,化学水浴法,异质结,I-V曲线
 
Fabrication and photoelectrical properties of SnO2/p-Si heterojunction structure via a simple chemical bath deposition method
Abstract:The SnO2 film was successfully deposited on Si wafer by a simple chemical bath method to fabricate n-SnO2/p-Si heterojunction structure photoelectric device. The novel chemical bath method is very cheap and convenient. The structural, optical and electrical properies of the SnO2 film were studied by XRD, XPS, UV-VIS spectrophotometer and Hall effect measurement. The current-voltage (I-V) curve of SnO2/p-Si heterojunction device was tested and analyzed in detail. Great photoelectric behavior was also obtained.
keywords:SnO2 film, chemical  bath method, heterojunction, current-voltage (I-V) characteristics
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