不同离子比的锰钴镍薄膜材料结构和电学性能
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中国科学院上海技术物理研究所 红外物理国家重点实验室,中国科学院上海技术物理研究所 红外物理国家重点实验室,中国科学院上海技术物理研究所 红外物理国家重点实验室,中国科学院上海技术物理研究所 红外物理国家重点实验室,中国科学院上海技术物理研究所 红外物理国家重点实验室,中国科学院上海技术物理研究所 红外物理国家重点实验室

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Effect of cation ratio on structural and electrical properties of MnxCoyNi3-x-yO4 thin films
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National Laboratory for Infrared Physics,Shanghai Institute of Technical Physics,Chinese Academy of Sciences,500 Yu Tian Road,National Laboratory for Infrared Physics,Shanghai Institute of Technical Physics,Chinese Academy of Sciences,500 Yu Tian Road,National Laboratory for Infrared Physics,Shanghai Institute of Technical Physics,Chinese Academy of Sciences,500 Yu Tian Road,National Laboratory for Infrared Physics,Shanghai Institute of Technical Physics,Chinese Academy of Sciences,500 Yu Tian Road,National Laboratory for Infrared Physics,Shanghai Institute of Technical Physics,Chinese Academy of Sciences,500 Yu Tian Road,National Laboratory for Infrared Physics,Shanghai Institute of Technical Physics,Chinese Academy of Sciences,500 Yu Tian Road

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    摘要:

    采用磁控溅射法分别制备了不同组分的Mn-Co-Ni-O(MCNO)薄膜材料。通过对材料结构分析,发现在Mn离子数目不变的情况下,随着Co离子的增加,晶粒尺寸逐渐增大,且晶格常数先增大后减小;在Co离子数目不变的情况下,随着Mn离子的增加,薄膜的择优生长晶面由(311)不晶面向(400)晶面转变。对电学性能测试进行分析,可知薄膜材料既有Mn离子的导电机制,也有Co离子的导电机制;Mn1.2Co1.5Ni0.3O4具有最低的电阻率(235 Ω.cm),具有最高的室温负温度电阻系数︱a295︱(4.7%.K-1)值。

    Abstract:

    Thin films of Mn-Co-Ni-O (MCNO) with different cation distribution are deposited by the magnetron sputtering method. By analyzing the material structure, it can be found that the grain size grows gradually with increasing Co ion number, while the lattice parameter grows first and then decreases when the Mn ion number is constant,. The preferentialSorientation ofSthe thin films changesSfromS(311) planeStoS(400) plane with increasing Mn ion number and the properties of the thin films are unstable when the Co ion number is constant. The electrical properties show that both of the Mn ions and the Co ions participate in the conductivity, and Mn1.2Co1.5Ni0.3O4 has the lowest resistivity (235 Ω.cm) and the highest negative temperature coefficient of resistance (NTCR) |α295| (4.7%.K-1) at room temperature.

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张飞,吴敬,欧阳程,周 炜,高艳卿,黄志明.不同离子比的锰钴镍薄膜材料结构和电学性能[J].红外与毫米波学报,2017,36(2):144~148]. ZHANG Fei, WU Jing, OUYANG Cheng, ZHOU Wei, GAO Yan-Qing, HUANG Zhi-Ming. Effect of cation ratio on structural and electrical properties of MnxCoyNi3-x-yO4 thin films[J]. J. Infrared Millim. Waves,2017,36(2):144~148.]

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  • 收稿日期:2016-06-08
  • 最后修改日期:2016-09-29
  • 录用日期:2016-09-30
  • 在线发布日期: 2017-04-28
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