基于再生长欧姆接触工艺的220 GHz InAlN/GaN 场效应晶体管
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专用集成电路国家级重点实验室,专用集成电路国家级重点实验室,专用集成电路国家级重点实验室,专用集成电路国家级重点实验室,专用集成电路国家级重点实验室,专用集成电路国家级重点实验室,专用集成电路国家级重点实验室,专用集成电路国家级重点实验室

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fT=220 GHz InAlN/GaN HFETs with regrown ohmic contacts
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National Key Laboratory of Application Specific Integrated CircuitASIC,Hebei Semiconductor Research Institute,National Key Laboratory of Application Specific Integrated CircuitASIC,Hebei Semiconductor Research Institute,National Key Laboratory of Application Specific Integrated CircuitASIC,Hebei Semiconductor Research Institute,National Key Laboratory of Application Specific Integrated CircuitASIC,Hebei Semiconductor Research Institute,National Key Laboratory of Application Specific Integrated CircuitASIC,Hebei Semiconductor Research Institute,National Key Laboratory of Application Specific Integrated CircuitASIC,Hebei Semiconductor Research Institute,National Key Laboratory of Application Specific Integrated CircuitASIC,Hebei Semiconductor Research Institute,National Key Laboratory of Application Specific Integrated CircuitASIC,Hebei Semiconductor Research Institute

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    摘要:

    在蓝宝石衬底上研制了具有高电流增益截止频率(fT)的InAlN/GaN异质结场效应晶体管 (HFETs).基于MOCVD外延n+-GaN欧姆接触工艺实现了器件尺寸的缩小, 有效源漏间距(Lsd)缩小至600 nm.此外, 采用自对准工艺制备了50 nm直栅.由于器件尺寸的缩小, Vgs= 1 V下器件最大饱和电流(Ids)达到2.11 A/mm, 峰值跨导达到609 mS/mm.根据小信号测试结果, 外推得到器件的fT和最大振荡频率(fmax)分别为220 GHz和48 GHz.据我们所知, 该fT值是目前国内InAlN/GaN HFETs器件报道的最高结果.

    Abstract:

    Scaled InAlN/GaN heterostructure field-effect transistors (HFETs) with high unity current gain cut-off frequency (fT) on sapphire substrate were fabricated and characterized. In this device, scaled source-to-drain distance (Lsd) of 600 nm was realized by metal organic chemical vapor deposition (MOCVD) based on regrow nonalloyed n+-GaN Ohmic contacts. Moreover, a 50 nm rectangular gate was fabricated by self-aligned-gate technology. A high drain saturation current density (Ids) of 2.11 A/mm @ Vgs= 1 V and a peak extrinsic transconductance (gm) of 609 mS/mm were achieved in the InAlN/GaN HFETs. In addition, from the small-signal RF measurements, the values of fT and maximum oscillation frequency (fmax) for the device with 50-nm rectangular gate were extrapolated to be 220 GHz and 48 GHz. To our best knowledge, the value of fT is the best reported one for InAlN/GaN HFETs in China.

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尹甲运,吕元杰,宋旭波,谭鑫,张志荣,房玉龙,冯志红,蔡树军.基于再生长欧姆接触工艺的220 GHz InAlN/GaN 场效应晶体管[J].红外与毫米波学报,2017,36(1):6~10]. YIN Jia-Yun, LV Yuan-Jie, SONG Xu-Bo, TAN Xin, ZHANG Zhi-Rong, FANG Yu-Long, FENG Zhi-Hong, CAI Shu-Jun. fT=220 GHz InAlN/GaN HFETs with regrown ohmic contacts[J]. J. Infrared Millim. Waves,2017,36(1):6~10.]

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  • 收稿日期:2016-04-06
  • 最后修改日期:2016-09-05
  • 录用日期:2016-09-29
  • 在线发布日期: 2017-03-28
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