锑化镓基半导体激光器高效率光束整形
投稿时间:2016-02-24  最后修改时间:2016-09-28  点此下载全文
引用本文:吴昊,彭航宇,宁永强,王立军.锑化镓基半导体激光器高效率光束整形[J].红外与毫米波学报,2016,35(6):652~655].WU Hao,PENG Hang-Yu,NING Yong-Qiang,WANG Li-Jun.High efficiency beam shaping of GaSb based diode lasers[J].J.Infrared Millim.Waves,2016,35(6):652~655.]
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作者单位E-mail
吴昊 中国科学院长春光学精密机械与物理研究所 发光学及应用国家重点研究室 hwu@ciomp.ac.cn 
彭航宇 中国科学院长春光学精密机械与物理研究所 发光学及应用国家重点研究室  
宁永强 中国科学院长春光学精密机械与物理研究所 发光学及应用国家重点研究室  
王立军 中国科学院长春光学精密机械与物理研究所 发光学及应用国家重点研究室  
基金项目:国家自然科学基金项目(青年基金项目);吉林省青年基金项目
中文摘要:锑化镓基半导体激光器发光波长为1.8~4 μm, 因为具有体积小、重量轻和电流驱动等优势, 应用范围很广.但是单管激光器并不能提供满足实际应用的激光功率, 因此需要将已经成功应用于近红外半导体激光器的光束合成方法移植到中红外波段.在各种光束合成方法中, 高效率的光束整形都是重要基础.展示了一种采用多只单管半导体器件的高效率光束整形方法, 并在实验中实现了1.94 μm波长1.93 W连续光功率输出, 整形效率高于90%.这个光束整形方法可以用于构建更复杂的光谱或相干光束合成.
中文关键词:中红外  半导体激光器  光束整形  光束合成
 
High efficiency beam shaping of GaSb based diode lasers
Abstract:GaSb-based diode lasers with emitting wavelength of 1.8 ~ 4 μm have a wide range of applications due to advantages of compact in size, light in weight and electric drive. However, single emitter can not provide enough laser power for practical applications. Therefore, methods of beam combination which have been successfully applied to diode lasers in near-infrared band are needed to be transplanted to mid-infrared band. In every method of beam combination, high efficiency beam shaping is basic and principal. A method of high efficiency beam shaping using multiple single diode lasers was demonstrated. A continuous-wave optical power of 1.93 W at wavelength of 1.94 μm with efficiency of higher than 90% was achieved experimentally. This method of beam shaping can be utilized to build spectral or coherent beam combination.
keywords:mid infrared, diode laser, beam shaping, beam combination
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