基于栅控二极管研究碲镉汞器件表面效应
投稿时间:2016-02-14  最后修改时间:2016-03-15  点此下载全文
引用本文:李雄军,韩福忠,李东升,李立华,胡彦博,孔金丞,赵俊,朱颖峰,庄继胜,姬荣斌.基于栅控二极管研究碲镉汞器件表面效应[J].红外与毫米波学报,2017,36(3):295~301].LI Xiong-Jun,HAN Fu-Zhong,LI Dong-Sheng,LI Li-Hua,HU Yan-Bo,KONG Jin-Cheng,ZHAO Jun,ZHU Ying-Feng,ZHUANG Ji-Sheng,JI Rong-Bin.HgCdTe surface effect based on gate-controlled diode device[J].J.Infrared Millim.Waves,2017,36(3):295~301.]
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作者单位E-mail
李雄军 昆明物理研究所 lixiongjun666@126.com 
韩福忠 昆明物理研究所  
李东升 昆明物理研究所  
李立华 昆明物理研究所  
胡彦博 昆明物理研究所  
孔金丞 昆明物理研究所  
赵俊 昆明物理研究所  
朱颖峰 昆明物理研究所  
庄继胜 昆明物理研究所  
姬荣斌 昆明物理研究所 790051959@qq.com 
中文摘要:采用不同工艺生长了CdTe/ZnS复合钝化层, 制备了相应的长波HgCdTe栅控二极管器件并进行了不同条件下I-V测试分析.结果表明, 标准工艺制备的器件界面存在较高面密度极性为正的固定电荷, 在较高的反偏下形成较大的表面沟道漏电流, 对器件性能具有重要的影响.通过钝化膜生长工艺的改进有效减小了器件界面固定电荷面密度, 使HgCdTe表面从弱反型状态逐渐向平带状态转变, 表面效应得到有效抑制, 器件反向特性获得显著改善.此外, 基于最优的工艺条件制备的器件界面态陷阱数量得到大幅降低, 器件稳定性增强;同时器件R0A随栅压未发生明显地变化.
中文关键词:长波碲镉汞  表面钝化  栅控二极管  I-V  R0A
 
HgCdTe surface effect based on gate-controlled diode device
Abstract:CdTe/ZnS composite passivation layers were grown with different processes, and the corresponding LW HgCdTe gate-controlled diodes were fabricated. The I-V measurement and analysis were carried out under different conditions for these devices. The results show that the polarity of the fixed interface charge is positive and interface charge density is high for the device prepared by the standard process. The large leakage current in the surface channel is formed under high reverse bias voltage, which has an important effect on the performance of the device. The fixed interface charge density is effectively reduced by improvement of the growth process of the passivation films, which changes the HgCdTe surface from weak inversion gradually to the flat band condition. The surface effect is effectively suppressed, thus the reverse characteristics of the device can be improved significantly. In addition, the number of interface traps has been greatly reduced for the device prepared by the optimized process condition, and the stability of the device is enhanced. There is no obvious change in R0A of the device with the gate voltage.
keywords:LW HgCdTe  Surface passivation  Gate-controlled diode  I-V  R0A
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