In this paper, we report research results of 256×256 dualcolor midwavelength infrared InAs/GaSb superlattice focal plane arrays. The detector structure is PNNP epitaxial multilayer and the signal is read out by sequential mode. The superlattice structure was grown on GaSb substrate using molecular beam epitaxy (MBE) technology. The respective structure of each absorption region are 7ML (InAs) /7ML (GaSb) and 10ML (InAs) /10ML (GaSb). The pixel center distance of the detector is 30μm. At 77 K measurement, the detector has 50% cutoff wavelength of 4.2 μm and 5.5 μm respectively; The NonP detector has a peak detectivity of 6.0×1010 cmHz1/2W-1 and dead pixels rate of 8.6%; The PonN detector has a peak detectivity of 2.3×109 cmHz1/2W-1 and dead pixels rate of 9.8%. Infrared images of both wavebands have been taken using infrared imaging test by adjusting devices voltage bias.