Au-doped Hg1-xCdx Te epitaxial layers were grown by vapor phase epitaxial method. The electrical properties of Hg1-xCdxTe epitaxial layers were investigated by Hall measurement. Profile of Au in Hg1-xCdx Te epitaxial layers was revealed by Secondary ion mass spectroscopy (SIMS) method. Hall coefficient and Hall mobility of three abnormal P type samples were discussed. Moreover, variable-magnetic-field Hall measurement was performed on Hg1-xCdx Te with antitype epitaxial layer. Mobility spectrum analysis was employed to verify surface electrons, bulk electrons and bulk holes mixed conduction in Hg1-xCdx Te epitaxial layers.