The lattice mismatched In0.68 Ga0.32 As materials were grown on InP substrate by MOCVD technology. InAsxP1-x metamorphic buffer layer structures with various As compositions were grown on InP substrates, which forms an alternative tension and strain offset buffer structure , In this way, we got a strain relaxed InAsxP1-x "virtual" substrate, which is lattice matched to In0.68 Ga0.32 As .With an optimized thickness of the buffer layer,the strain was completely relaxed in the "virtual" substrate. The analysis of AFM, HRXRD ,TEM and photoluminescence(PL) indicated that this method can effectively improve the quality of the In0.68 Ga0.32 As material.