The response of photoconductive HgCdTe detectors to the irradiation of CW bandoff laser was studied. It was found that there is a point of inflexion, T0, on the temperature dependence of the voltage response of the detector. The voltage response increases with temperature for temperature of the detector T＜T0, and decreases with temperature for T＞T0. Two time scales are found to be due to the two thermally resistive bonding layers. The inflection temperature is determined by the impurity concentration. For temperature T＜T0, the temperature dependence of the voltage response depends on the variation of mobility of the carrier , whereas T＞T0, thermally generated carriers contribute to the voltage response.