The imperfects in the wafer structure of high power 1060 nm diode laser, which prevents the improvement of laser power, was analyzed. Base on the analyzing results, the quantum well and the waveguide form were optimized. The relationship between waveguide width and laser power was simulated. According to the distribution of various modes, the position of quantum well was optimized and an asymmetric wide waveguide structure was designed. The calculation results of confinement factor for various modes show that the optimized asymmetric waveguide structure could increase the loss of high order modes while decrease the confinement factor of fundamental mode.