基于N-on-P结构的背照射延伸波长640×1线列InGaAs探测器
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中国科学院上海技术物理研究所,中国科学院上海技术物理研究所,中科院上海技术物理研究所,中科院上海技术物理研究所,中科院技术物理研究所,中科院上海技术物理研究所,中科院上海技术物理研究所,中科院上海技术物理研究所,中科院上海微系统与信息技术研究所,中国科学院上海技术物理研究所

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国家自然科学基金重点项目(No.50632060),中国科学院知识创新工程青年人才领域前沿前瞻项目资助(Q-ZY-9)、(C2-32)


Extended-wavelength 640×1 linear InGaAs detector arrays using N-on-P configuration for back illumination
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shanghai institute of technical physics of the Chinese academy of science,shanghai institute of technical physics of the Chinese academy of science,shanghai institute of technical physics of the Chinese academy of science,shanghai institute of technical physics of the Chinese academy of science,shanghai institute of technical physics of the Chinese academy of science,shanghai institute of technical physics of the Chinese academy of science,shanghai institute of technical physics of the Chinese academy of science,shanghai institute of technical physics of the Chinese academy of science,Shanghai Institute of Microsystem and Information Technology of the Chinese Academy of Sciences,shanghai institute of technical physics of the Chinese academy of science

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    摘要:

    在N-on-P型In0.78Al0.22As/In0.78Ga0.22As外延材料上,采用感应耦合等离子体(ICP)刻蚀技术制备了背照射640×1线列InGaAs探测器芯片,研究了探测器光电性能.结果表明,室温下单元器件响应截止波长和峰值波长分别为2.36 μm和1.92 μm,平均优值因子(R0A)为16.0Ω·cm2,峰值量子效率达到了37.5%;在1 ms积分时间下焦平面探测器平均峰值探测率达到了2.01×1011 cmHz1/2/W,响应非均匀性为8.77%,盲元率约为0.6%.

    Abstract:

    Back-illuminated 640×1 linear InGaAs detector arrays were fabricated on the In0.78Al0.22As/In0.78Ga0.22As material of N-on-P configuration by the inductively coupled plasma (ICP) etching. The photoelectric characteristics of the detector were investigated. The results indicated that the cutoff-wavelength and peak-wavelength are 2.36 μm and 1.92 μm, respectively, at room temperature. The average value of R0A is 16.0 Ω·cm2 and the quantum efficiency of the peak wavelength reaches to 37.5%. Otherwise, the average peak detectivity of linear detector array reaches to 2.01×1011 cmHz1/2/W, the response nonuniformity is about 8.77% and the defective pixel ratio is 0.6% for 1 ms of integrate time.

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朱耀明,李永富,李雪,唐恒敬,邵秀梅,陈郁,邓洪海,魏鹏,张永刚,龚海梅.基于N-on-P结构的背照射延伸波长640×1线列InGaAs探测器[J].红外与毫米波学报,2012,31(1):11~14]. ZHU Yao-Ming, LI Yong-Fu, LI Xue, TANG Heng-Jing, SHAO Xiu-Mei, CHEN Yu, DENG Hong-Hai, WEI Peng, ZHANG Yong-Gang, GONG Hai-Mei. Extended-wavelength 640×1 linear InGaAs detector arrays using N-on-P configuration for back illumination[J]. J. Infrared Millim. Waves,2012,31(1):11~14.]

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  • 收稿日期:2010-12-05
  • 最后修改日期:2011-01-10
  • 录用日期:2011-01-18
  • 在线发布日期: 2012-02-28
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