基于单层二硫化钨光控太赫兹调制器的研究
投稿时间:2018-09-18  修订日期:2019-01-05  点此下载全文
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作者单位E-mail
付亚州 中国科学院上海微系统与信息技术研究所 yzfu@mail.sim.ac.cn 
谭智勇 中国科学院上海微系统与信息技术研究所  
王长 中国科学院上海微系统与信息技术研究所 cwang@mail.sim.ac.cn 
曹俊诚 中国科学院上海微系统与信息技术研究所  
基金项目:国家重点研发计划(2017YFF0106302, 2017YFA0701005);国家自然科学基金(61775229,61574155,61604161);上海市科技创新行动计划(17ZR1448300)
中文摘要:在太赫兹技术的应用中,控制太赫兹波的传输非常重要,太赫兹调制器被认为是下一代太赫兹无线通信中的重要器件。成功的研究了一种硅上生长单层二硫化钨的新型光泵浦太赫兹调制器,由于在硅衬底和二硫化钨的交界处出会形成异质结,二硫化钨充当着催化剂的作用,在光泵浦的作用下,在异质结处催化出更多的载流子,因此实现了更大的调制深度。结果表明,在泵浦光波长为660 nm、功率仅为117 mW时,该调制器的调制深度达到了63.6%。这种新型二维过渡金属硫化物对太赫兹波有着比硅衬底本身更高的调制效率,使其在太赫兹技术中有很好的应用前景。
中文关键词:太赫兹  光控调制器  单层二硫化钨
 
Research on optical controlled terahertz modulator based on monolayer Tungsten Disulfide
Abstract:Controlling the propagation of terahertz (THz) wave is very important in the application of THz technology. THz modulator is considered to be the key device in next-generation THz wireless communication. A new-type optically pumped THz modulator based on Si-grown monolayer tungsten disulfide (WS2) was demonstrated. WS2 acts as a catalyst due to the formation of heterojunction at the junction between Si substrate and WS2, since more carriers are catalyzed at the heterojunction under pumping power, the modulator can achieve more deep modulation depth. The result shows that the modulation depth of this Si-grown monolayer WS2 modulator can reach 63.6% under the low pumping power of 117 mW and the wavelength of the pump light is 660 nm. This novel two-dimensional transition metal dichalcogenides have a higher modulation efficiency than Si substrate, and then have a great prospect in the application of THz technology.
keywords:Terahertz, optical  controlled modulator, monolayer  tungsten disulfide
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